Abstract:Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal's seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection and transmission geometry to investigate the dislocation formation and propagation during growth. For the first time, full wafer mappings were recorded in 00012 back-reflection geometry with a CCD camera system, providing an overview of the dislocation arrangement in terms of dislocation type, density and homogeneous distribution. Furthermore, by having similar resolution to conventional SWXRT photographic film, the method enables identification of individual dislocations, even single threading screw dislocations, which appear as white spots with a diameter in the range of 10 to 30 µm. Both investigated wafers showed a similar dislocation arrangement, suggesting a constant propagation of dislocations during crystal growth. A systematic investigation of crystal lattice strain and tilt at selected wafer areas with different dislocation arrangements was achieved with high-resolution X-ray diffractometry reciprocal-space map (RSM) measurements in the symmetric 0004 reflection. It was shown that the diffracted intensity distribution of the RSM for different dislocation arrangements depends on the locally predominant dislocation type and density. Moreover, the orientation of specific dislocation types along the RSM scanning direction has a strong influence on the local crystal lattice properties.

Determination of the Spacing Between Hydrogen-Intercalated Quasi-Free-Standing Monolayer Graphene and 6H-SiC(0001) Using Total-Reflection High-Energy Positron Diffraction

Effects of Non-Rotationally Symmetric Aberrations on the Quantitative Measurement of Lattice Positions in a Graphene Monolayer Using High-Resolution Transmission Electron Microscopy

Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Surface and interface structure of quasi-free standing graphene on SiC

Electron diffraction study of the transformation 6√3 reconstruction on 4H–SiC(0001) into quasi-free-standing epitaxial graphene

Thermodynamics and Kinetics of H Adsorption and Intercalation for Graphene on 6H-Sic(0001) from First-Principles Calculations

Charged Impurity Scattering and Electron-Electron Interactions in Large-Area Hydrogen Intercalated Bilayer Graphene

Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Ab initio Study of Graphene on SiC

Li-intercalated Graphene on SiC(0001): an STM study

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Degeneracy in Intercalated Pb Phases under Buffer-Layer Graphene on SiC(0001) and Diffuse Moiré Spots in Surface Diffraction.

Strain-modulated Intercalated Phases of Pb Monolayer with Dual Periodicity in SiC(0001)-Graphene Interface

Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Silicon Intercalation at the Interface of Graphene and Ir(111)