Abstract:The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

Surface and interface structure of quasi-free standing graphene on SiC

Uniform Coverage of Quasi-Free Standing Monolayer Graphene on Sic by Hydrogen Intercalation

Thermodynamics and Kinetics of H Adsorption and Intercalation for Graphene on 6H-Sic(0001) from First-Principles Calculations

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Interfacial thermal conductance of a silicene/graphene bilayer heterostructure and the effect of hydrogenation.

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Restoring the electronic properties of epitaxial graphene on SiC substrate by Ar intercalation

Bi-intercalated epitaxial graphene on SiC(0001)

Extent of hydrogen coverage of Si(001) under chemical vapor deposition conditions from ab initio approaches

Inducing electronic changes in graphene through silicon (100) substrate modification.

Tuning Electronic Properties of Epitaxial Multilayer-Graphene/4h–sic(0001) by Joule Heating Decomposition in Hydrogen

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Silicon Intercalation at the Interface of Graphene and Ir(111)

Er intercalation and its impact on transport properties of epitaxial graphene

Structural and electronic properties of Li intercalated graphene on SiC(0001)

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

Intercalation of Li at the Graphene/Cu Interface