Abstract:It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(000 (1) over bar)] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(000 (1) over bar) as well as the graphene layers interactions with these TiC(111)/SiC(000 (1) over bar) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(000 (1) over bar). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fccsite stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(000 (1) over bar) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(000 (1) over bar) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(000 (1) over bar) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/ SiC(000 (1) over bar) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(000 (1) over bar) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(000 (1) over bar) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(000 (1) over bar) substrates and the design of graphene/TiC/SiC-based electronic devices.

Ab initio Study of Graphene on SiC

Interface Structure of Graphene on SiC(000-1)

Electronic Properties of Graphene on the C-decorated Si(111) Surface: an Ab Initio Study

Surface and interface structure of quasi-free standing graphene on SiC

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Bi-intercalated epitaxial graphene on SiC(0001)

Ab Initio Study Of Electronic And Optical Behavior Of Two-Dimensional Silicon Carbide

Bonding characteristics of the interfacial buffer layer in epitaxial graphene via density functional theory

Structural and electronic properties of Li intercalated graphene on SiC(0001)

Structure and electronic states of a graphene double vacancy with an embedded Si dopant

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Epitaxial graphene on SiC(0001): More than just honeycombs

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer

First principles study of the adsorption of C60 on Si(111)

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Interfacial interactions between local defects in amorphous SiO$_2$ and supported graphene