Abstract:The potential of graphene to impact the development of the next generation of electronics has renewed interest in its growth and structure. The graphitization of hexagonal SiC surfaces provides a viable alternative for the synthesis of graphene, with wafer-size epitaxial graphene on SiC(0001) now possible. Despite this recent progress, the exact nature of the graphene-SiC interface and whether the graphene even has a semiconducting gap remain controversial. Using scanning tunneling microscopy with functionalized tips and density functional theory calculations, here we show that the interface is a warped carbon sheet consisting of three-fold hexagon-pentagon-heptagon complexes periodically inserted into the honeycomb lattice. These defects relieve the strain between the graphene layer and the SiC substrate, while still retaining the three-fold coordination for each carbon atom. Moreover, these defects break the six-fold symmetry of the honeycomb, thereby naturally inducing a gap: the calculated band structure of the interface is semiconducting and there are two localized states near K below the Fermi level, explaining the photoemission and carbon core-level data. Nonlinear dispersion and a 33 meV gap are found at the Dirac point for the next layer of graphene, providing insights into the debate over the origin of the gap in epitaxial graphene on SiC(0001). These results indicate that the interface of the epitaxial graphene on SiC(0001) is more than a dead buffer layer, but actively impacts the physical and electronic properties of the subsequent graphene layers.

Surface and interface structure of quasi-free standing graphene on SiC

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface

Intercalation of hydrogen in the SiC/epitaxial graphene interface

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Li-intercalated Graphene on SiC(0001): an STM study

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Inducing electronic changes in graphene through silicon (100) substrate modification.

Interface Structure of Graphene on SiC(000-1)

Preparation And Electrical Transport Properties Of Quasi Free Standing Bilayer Graphene On Sic (0001) Substrate By H Intercalation

Ab initio Study of Graphene on SiC

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

STM Characterization of a Graphitized SiC(0001)surface

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Epitaxial graphene on SiC(0001): More than just honeycombs

An Exchange Intercalation Mechanism for the Formation of a Two-Dimensional Si Structure Underneath Graphene

Charged Impurity Scattering and Electron-Electron Interactions in Large-Area Hydrogen Intercalated Bilayer Graphene

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface