Abstract:Experimental setups for charge transport measurements are typically not compatible with the ultra-high vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect methods, including dielectric gating and ionic liquid gating, achieve too low a carrier density to induce electronic phase transitions. To bridge this gap, we developed an integrated flip-chip method to dope graphene by alkali vapour in the diffusive regime, suitable for charge transport measurements at ultra-high charge carrier density. We introduce a cesium droplet into a sealed cavity filled with inert gas to dope a monolayer graphene sample by the process of cesium atom diffusion, adsorption and ionization at the graphene surface, with doping beyond an electron density of $4.7\times10^{14}~\mathrm{cm}^{-2}$ monitored by operando Hall measurement. The sealed assembly is stable against oxidation, enabling measurement of charge transport versus temperature and magnetic field. Cyclotron mass inversion is observed via the Hall effect, indicative of the change of Fermi surface geometry associated with the Liftshitz transition at the hyperbolic $M$ point of monolayer graphene. The transparent quartz substrate also functions as an optical window, enabling non-resonant Raman scattering. Our findings show that chemical doping, hitherto restricted to ultra-high vacuum, can be applied in a diffusive regime at ambient pressure in an inert gas environment and thus enable charge transport studies in standard cryogenic environments

Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

Surface and interface structure of quasi-free standing graphene on SiC

Direct Experimental Evidence for the Reversal of Carrier Type Upon Hydrogen Intercalation in Epitaxial Graphene/sic(0001)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Widely tunable carrier mobility of boron nitride-embedded graphene.

Charged Impurity Scattering and Electron-Electron Interactions in Large-Area Hydrogen Intercalated Bilayer Graphene

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Carrier dynamics in graphene: ultrafast many-particle phenomena

Measurement of high carrier mobility in graphene in an aqueous electrolyte environment

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Mass inversion at the Lifshitz transition in monolayer graphene by diffusive, high-density, on-chip, doping

Preparation And Electrical Transport Properties Of Quasi Free Standing Bilayer Graphene On Sic (0001) Substrate By H Intercalation

Theoretical Study on Carrier Mobility of Hydrogenated Graphene/Hexagonal Boron-Nitride Heterobilayer

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

Inverse Relationship Between Carrier Mobility and Bandgap in Graphene

An In-situ Annealing effect of Graphene-Graphene Interlayer Conduction

Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities

Neutral scatterers dominate carrier transport in CVD graphene with ionic impurities

Accessing The Transport Properties Of Graphene And Its Multilayers At High Carrier Density