Abstract:We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm(2)V(-1)s(-1) to >11 000 cm(2)V(-1)s(-1) at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10(12) cm(-2) to less than 10(12) cm(-2). For a typical large (30 × 280 μm(2)) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level filling factors of ν = 2, 6, 10, 14... 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at ν = 2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mΩ, for measurement currents as high as 250 μA. This is very promising in the view of an application in metrology.

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Accessing The Transport Properties Of Graphene And Its Multilayers At High Carrier Density

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Low Carrier Density Epitaxial Graphene Devices On SiC

Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride.

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

Single-Carrier Transport in Graphene/hBN Superlattices

Half Integer Quantum Hall Effect in High Mobility Single Layer Epitaxial Graphene

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Electronic Transport in Two Stacked Graphene Monolayers.

Epitaxial Graphene Electronic Structure And Transport

Magnetotransport in hybrid InSe/monolayer graphene on SiC

The effect of bilayer domains on electronic transport properties of epitaxial graphene on SiC

Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC

Quantum Transport in Double-Gated Graphene Devices

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Mobility in Graphene Double Gate Field Effect Transistors

Transport Measurements on Ultra-Clean Dual-Gated Suspended Bilayer Graphene

Dirac Particles in Epitaxial Graphene Films Grown on SiC