Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene

Sang-Hoon Bae,Xiaodong Zhou,Seyoung Kim,Yun Seog Lee,Samuel S. Cruz,Yunjo Kim,James B. Hannon,Yang Yang,Devendra K. Sadana,Frances M. Ross,Hongsik Park,Jeehwan Kim
DOI: https://doi.org/10.1073/pnas.1620176114
IF: 11.1
2017-04-03
Proceedings of the National Academy of Sciences
Abstract:Significance The use of epitaxial graphene has been less favored over the use of chemical vapor deposition (CVD)-grown polycrystalline graphene because graphene formed near SiC vicinal steps accompanies carrier scattering, which makes the practical domain size of epitaxial graphene much smaller than that of CVD-grown graphene. Nonetheless, the origin of carrier scattering at the SiC vicinal steps has not been fully understood. Here, we experimentally reveal that graphene formed at side walls is pristine, and the scattering near the steps mainly originates from the deformation of graphene and partially from stripes of bilayer graphene. This understanding of the origin of scattering allows us to demonstrate large-size single-domain graphene, removing major scattering sources through a layer-resolved transfer.
multidisciplinary sciences
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