Abstract:Liquid-phase exfoliation of layered materials offers a large-scale approach toward the synthesis of 2D nanostructures. Structural properties of materials can however change during transition from bulk to the 2D state. Any such changes must be examined and understood for successful implementation of 2D nanostructures. In this work, we demonstrate nonbulk stacking sequences in the few-layer MoS2 and WS2 nanoflakes produced by liquid-phase exfoliation. Our analysis shows that nonbulk stacking sequences can be derived from its bulk counterparts by translational shifts of the layers. No structural changes within the layers were observed. Twenty-seven MoS2 and five WS2 nanoflakes were imaged and analyzed. Nine MoS2 and four WS2 nanoflakes displayed nonbulk stacking. Such dominance of the nonbulk stacking suggests high possibility of unusual stacking sequences in other 2D nanostructures. Notably, the electronic structure of some non bulk stacked bilayers presents characteristics which are uncommon to either the bulk phase or the single monolayer, for instance, a spin-split conduction band bottom. Our main characterization technique was annular dark-field scanning transmission electron microscopy, which offers direct and reliable Imaging of atomic columns. The stacking characterization approach employed here can be readily applied toward other few-layer transition metal chalcogenides and oxides.

Stacking domain morphology in epitaxial graphene on silicon carbide

Stacking domains in graphene on silicon carbide: a pathway for intercalation

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Stacking Sequence Dependence of Graphene Layers on SiC(000-1) - Experimental and Theoretical Investigation

Influence of Defects in SiC (0001) on Epitaxial Graphene

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Scanning Tunneling Microscope Observations of Non-Ab Stacking of Graphene on Ni Films

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2.

Impact of local stacking on the graphene-impurity interaction: theory and experiments

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Imaging graphene moiré superlattices via scanning Kelvin probe microscopy

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Stacking transition in bilayer graphene caused by thermally activated rotation

Unusual Stacking Variations in Liquid-Phase Exfoliated Transition Metal Dichalcogenides

Growth and Raman Spectra of Single-Crystal Trilayer Graphene with Different Stacking Orientations.

Domain coarsening in polycrystalline graphene

Emergent layer stacking arrangements in c-axis confined MoTe2