Abstract:The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001). As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.

Electron diffraction study of the transformation 6√3 reconstruction on 4H–SiC(0001) into quasi-free-standing epitaxial graphene

The evolution of 3×3,6×6,√3×√3R30° and 6√3×6√3R30° superstructures on 6H–SiC (0001) surfaces studied by reflection high energy electron diffraction

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: an Azimuthal RHEED Approach.

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Surface and interface structure of quasi-free standing graphene on SiC

Near-free-standing Epitaxial Graphene on Rough SiC Substrate by Flash Annealing at High Temperature

Surface Reconstruction of Germanium: Hydrogen Intercalation and Graphene Protection

Bi-intercalated epitaxial graphene on SiC(0001)

Interface Structure of Graphene on SiC(000-1)

Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Epitaxial graphene on SiC(0001): More than just honeycombs

Restoring the electronic properties of epitaxial graphene on SiC substrate by Ar intercalation

A density functional theory study of the atomic and electronic structures of 3C-SiC()-()-R30° surface reconstruction

STM and RHEED study of the Si(001)-c(8x8) surface

In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 1 ̄) with synchrotron radiation photoelectron spectroscopy

In situ atomic-scale observation of monolayer graphene growth from SiC

Influence of the Etching Process on the Surface Morphology of 4H-Sic Substrate Used in the Epitaxial Graphene

Raman spectroscopy of epitaxial graphene on a SiC substrate

Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth