Abstract:Epitaxial growth of graphene on SiC is a candidate system for the growth of graphene on a scale large enough for technological applications [1]. Growth is achieved by annealing at temperatures above 1200C, causing Si to evaporate from the SiC preferentially to C, with the resulting carbon-rich surface forms a graphitic layer, with the structural and electronic properties extremely sensitive to annealing conditions. Crucially, in this system both the supply of carbon and the conditions under which the graphene films coalesce are temperature dependent and therefore closely coupled [2]. We present data from magnetotransport and low energy electron microscopy (LEEM)measurements for (0001) 4H SiC samples annealed under UHV at various temperatures, showing structural and electronic coherence lengths which are in good agreement. The evolution of coherent electronic transport occurs for samples annealed at higher temperatures as the size of individual graphene domains increases from the tens of nm to micron scale under these conditions (shown in figure 1). Using a lower-temperature anneal followed by an additional higher-temperature treatment, we show that the larger grain size is due to a coalescence mechanism, as opposed to faster propagation of single grains. This suggests a means of partially decoupling the carbon supply from the coalescence process: potentially important for integration with large-scale wafer production. Following lithographic patterning, magnetotransport (MR) data have been taken at various cryogenic temperatures and can be fitted to weak localisation (WL) or weak anti-localisation (WAL) models [3, 4], allowing the various electron scattering rates to be ascertained. Following these fitting procedures, subtraction of the fits from the measured data allows less dominant contributions to magnetotransport to be discerned. For less ordered samples, it is necessary to include an electron-electron interaction term to fit successfully to lowtemperature MR data, while the temperatures at which this becomes necessary agree with a deviation from linear temperature dependence of the scattering rate τφ.

Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model

Determination of the Spacing Between Hydrogen-Intercalated Quasi-Free-Standing Monolayer Graphene and 6H-SiC(0001) Using Total-Reflection High-Energy Positron Diffraction

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Multistable rippling of graphene on SiC: A Density Functional Theory study

Electron diffraction study of the transformation 6√3 reconstruction on 4H–SiC(0001) into quasi-free-standing epitaxial graphene

Raman spectra and infrared intensities of graphene-like clusters in compared to epitaxial graphene on Si

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

A new structural model for the SiC(0001)(3×3) surface derived from first principles studies

Surface and interface structure of quasi-free standing graphene on SiC

Quantitative determination of atomic buckling of silicene by atomic force microscopy

Epitaxial graphene on SiC(0001): More than just honeycombs

Grain Boundaries in Graphene on SiC(000$\bar{1}$) Substrate

Strain-modulated Intercalated Phases of Pb Monolayer with Dual Periodicity in SiC(0001)-Graphene Interface

Density functional theory study of quasi-free-standing graphene layer on 4H-SiC(0001) surface decoupled by hydrogen atoms

Moiré Patterns as a Probe of Interplanar Interactions for Graphene on h-BN

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: an Azimuthal RHEED Approach.

Grain coalescence and electronic properties of epitaxial graphene

Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN

A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures

Dirac Particles in Epitaxial Graphene Films Grown on SiC

Thermodynamics and electronic structure of adsorbed and intercalated plumbene in graphene/hexagonal SiC heterostructures