Abstract:Direct chemical vapor deposition (CVD) of graphene on any desired substrate is always required to manufacture high-quality heterojunctions with excellent interfacial properties. Herein, the growth of graphene on cubic-silicon carbide (3C-SiC) surfaces using conventional high-temperature direct thermal CVD and plasma-enhanced CVD (PECVD) is explored, which is hardly reported to date. Since 3C-SiC substrates are not available, the controlled self-limited 3C-SiC layers on the Si(100) substrates were grown at different temperatures (900-1200 degrees C) via thermal-CVD technique to obtain virtual 3C-SiC substrates. The direct production of graphene via thermal CVD could not be achieved on such 3C-SiC surfaces. The density functional theory and molecular dynamics simulations confirm that the carbon atom diffusion over the 3C-SiC surface is extremely low, like over the Si surface, which leads to no graphene growth. A similar growth mechanism may be attributed to their similar crystal structure viz diamond cubic for Si and zinc blend for 3C-SiC. However, graphene nanowalls (GNWs) were successfully grown on both Si and 3CSiC/Si surfaces at 700 degrees C via the PECVD technique, where similar surface morphologies were observed because the growth mechanism of GNWs is independent of substrate type. Moreover, I-V characterization was performed for different SiC/Si heterostructures and their corresponding GNWs/SiC/Si heterostructures, respectively. The current conduction improved considerably more for GNW/SiC/Si heterostructures as compared to SiC/Si heterostructures, but the creation of a SiC interfacial layer as well as its quality affected the conductivity of GNWs/SiC/Si heterostructures. The inevitable formation of an interfacial SiC layer during the direct graphene growth via thermal CVD on Si substrates can seriously affect the performance of graphene/Si heterojunction devices. Hence, PECVD growth of graphene is an ideal option to fabricate graphene/Si heterojunction devices with excellent interfacial properties or graphene/3C-SiC/Si heterojunction devices for various electronic/optoelectronic applications such as gas sensors and photovoltaic devices.

Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

An Exchange Intercalation Mechanism for the Formation of a Two-Dimensional Si Structure Underneath Graphene

Surface and interface structure of quasi-free standing graphene on SiC

Calcium Intercalation Underneath N-layer Graphene on 6H-Sic(0001)

Bi-intercalated epitaxial graphene on SiC(0001)

Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

In situ atomic-scale observation of monolayer graphene growth from SiC

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Epitaxial Growth of Monolayer SnSe2 Films on Gd-Intercalated Quasi-Free-Standing Monolayer Graphene with Enhanced Interface Adsorption

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: an Azimuthal RHEED Approach.

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Controlled fabrication of freestanding monolayer SiC by electron irradiation

Early stage formation of graphene on the C-face of 6H-SiC

Chemical Vapor Deposition of Graphene on Self-Limited SiC Interfacial Layers Formed on Silicon Substrates for Heterojunction Devices

Nano-Objects Developing at Graphene/Silicon Carbide Interface

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

Morphological Features and Nanostructures Generated During SiC Graphitization Process