Abstract:In this study, epitaxial graphene layers of cm2 sizes were grown on silicon carbide (SiC) substrates by high-temperature sublimation. The behavior of the two crystallographic SiC-polar faces and its effect on the growth mechanism of graphene layers and their properties were investigated. Crystallographic structural differences observed in AFM studies were shown to cause disparities in the electrical conductivity of the grown layers. On the silicon-polar (Si-polar) face of SiC, the graphene formation occurred in spike-like structures that originated orthogonally from atomic steps of the substrate and grew outwards in the form of 2D nucleation with a fairly good surface coverage over time. On the carbon-polar (C-polar) face, a hexagonal structure already formed at the beginning of the growth process. On both polar faces, the known process of step-bunching promoted the formation of nm-scale structural obstacles. Such a step-bunching effect was found to be more pronounced on the C-polar face. These 2D-obstacles account for a low probability of a complete nano-sheet formation, but favor 2D-structures, comparable to graphene nanoribbons. The resulting direction-dependent anisotropic behavior in electrical conductivity measured by four-point probe method mainly depends on the height and spacing between these structural-obstacles. The anisotropy becomes less prudent as and when more graphene layers are synthesized.

Early stage formation of graphene on the C-face of 6H-SiC

Graphene formed on SiC under various environments: Comparison of Si-face and C-face

Few layers graphene on 6H-SiC(000-1): an STM study

Carbon Flux Assisted Graphene Layer Growth on 6H-Sic(000-1) by Thermal Decomposition

Interface Structure of Graphene on SiC(000-1)

Evidence of Atomically Resolved 6×6 Buffer Layer with Long-Range Order and Short-Range Disorder During Formation of Graphene on 6H-Sic by Thermal Decomposition

Growth mechanism for epitaxial graphene on vicinal 6H-SiC(0001) surfaces

In situ atomic-scale observation of monolayer graphene growth from SiC

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

Few-layer Graphene Growth on 6H-Sic(0001) Surface at Low Temperature Via Ni-silicidation Reactions

Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Morphological Features and Nanostructures Generated During SiC Graphitization Process

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Surface structure of 3C‐SiC(111) grown on Si(111) surface by C 60 precursor

Bottom-up growth of monolayer honeycomb SiC

Carbonization Process And Sic Formation At C-60/Si(111) Interface Studied By Srpes

Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate