Abstract:Silicon Carbide (SiC) is one of the most promising new-generation semiconductor material for high-power and high-efficiency electronic devices overcoming in some respects silicon mature performances. SiC substrates are more and more widely used in many semiconductor-based applications, like DC/AC converters. SiC-based MOSFET technology is nowadays applied in electric/hybrid vehicle power conversion systems. To further enhance the performance of SiC HV devices, trench-gate MOSFET design is preferred to planar-gate MOSFET structure. The trenches frame is defined by Reactive Ion Etching (RIE) by which high aspect ratio structures can be attained. Despite the fine-tuning of the etching process, some sidewall striations' undesired effects occur, degrading the performances of the devices. Accordingly, H 2 gas etching and sacrificial oxidation methods were adopted to recover the wall integrity, trying to restore the atomic roughness that characterizes the 4H–SiC. Since this problem interests vertically oriented trench sidewalls, a quantitative estimation of the roughness is difficult as Atomic Force Microscopy (AFM) measurements are always time-dispending and hard to manage: therefore, only a qualitative evaluation of the sidewall roughness can be accomplished by FIB/SEM micrographs. ImageJ software is herein used for a quantitative analysis starting from SEM images allowing a fast and repeatable quality assessment of trench striations before and after the recovery processes. The image analysis can produce numerical data regarding the status of the SiC trenches. In the present work, we will refer to the image analysis output value as Relative Roughness (RR). It represents the numerical data helpful to fulfill the study with a Design of Experiments (DOE) and Responsive Surface Method (RSM) aimed to optimize the post-etch recovery procedures.

Measurement and simulation of mechanical and optical properties of sputtered amorphous SiC coatings

Investigation of Amorphous-Sic Thin Film Deposition by RF Magnetron Sputtering for Optical Applications

Mechanical loss in state-of-the-art amorphous optical coatings

Measurement and Analysis on the Mechanical Properties of Silicon Carbide Film

Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Image analysis development for optimization of 4H–SiC trench recovery treatment by combination of gas etching and sacrificial oxidation approaches

A Study of the Microstructure and Mechanical Properties of Sic Coatings on Spherical Particles

Thermal and Mechanical Properties of Amorphous Silicon Carbide Thin Films Using the Femtosecond Pump-Probe Technique

Structural and mechanical properties of amorphous Si–C-based thin films deposited by pulsed magnetron sputtering under different sputtering powers

Influence of surface morphology on processing of C/SiC composites via femtosecond laser

Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures

Amorphous optical coatings of present gravitational-wave interferometers

Towards the solution of coating loss measurements using thermoelastic-dominated substrates

Surface Morphology of Α-Sic Coatings Deposited by RF Magnetron Sputtering

Measurements of mechanical thermal noise and energy dissipation in optical dielectric coatings

Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method

Mechanical Properties of SiC Coatings on Spherical Particles Measured Using the Micro-Beam Method

Simulations of the Ultra-Fast Kinetics in Ni-Si-C Ternary Systems under Laser Irradiation

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Microstructure, Mechanical and Tribological Properties of CrSiC Coatings Sliding Against SiC and Al2O3 Balls in Water