Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures

Characterizations on the Doping of Single-Crystal Silicon Carbide

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Novel Electrical Characterization of Thin 3C-Sic Films on Si Substrates

Silicon lattice layer regulation: A close-to-atomic-scale method for optimizing infrared optical properties

Experimental and Simulation Research on Femtosecond Laser Induced Controllable Morphology of Monocrystalline SiC

Investigation of Amorphous-Sic Thin Film Deposition by RF Magnetron Sputtering for Optical Applications

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Infrared Reflectance Study of 3C-Sic Epilayers Grown on Silicon Substrates

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Simulation and experimental study on limited cutting and heat effect of silicon carbide

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

In–situ strain control in epitaxial silicon carbide compound semiconductor

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)

Characterizations of Removal Rate and Temperature in the Inductively Coupled Plasma Etching of Silicon Carbide

Crystal Cleavage, Periodic Nanostructure And Surface Modification Of Sic Ablated By Femtosecond Laser In Different Media

Metrology of Sub-0.5 Mu M Silicon Epitaxial Films