Abstract:This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.

Effect of Characterization Temperature on the Radiation Induced Degradation of Optocouplers

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Effect of irradiation on temperature performance of dispersion-compensation no-core cascade optical-fiber sensor coated with polydimethylsiloxane film

Study on Neutron Displacement Damage Effect in Phototransistor

Junction temperature study during degradation process of high power light-emitting diodes

Degradation of CMOS APS Image Sensors Induced by Total Ionizing Dose Radiation at Different Dose Rates and Biased Conditions

Different Dose Rate Radiation Effects on Linear CCDs

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Degradation of a COTS Linear CCD Induced by Proton Irradiation

The Analysis of CCD Sensitive Parameters Degraded by Radiation Damage

A Characterization Method for TID Versus Temperature Effects on Microelectronic Circuits

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits

Performance Analysis of Gamma-Ray-Irradiated Color Complementary Metal Oxide Semiconductor Digital Image Sensors

Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes

Dose Rate Effects on Array CCDs Exposed by Co-60 Γ Rays Induce Saturation Output Degradation and Annealing Tests

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits

Research on Mechanism of Elevated Temperature Irradiation Accelerated Test for Enhanced Low Dose Rate Sensitivity

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Evolution of Ionization-Induced Defects in GLPNP Bipolar Transistors at Different Temperatures

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Degradation Analysis of the Pinned Photodiode CMOS Image Sensors Induced by Energetic Proton Radiation