HVPE growth of corundum-structured $α$-Ga$_2$O$_3$ on sapphire substrates with $α$-Cr$_2$O$_3$ buffer layer

S.I. Stepanov,V.I. Nikolaev,A.V.Almaev,A.I.Pechnikov,M.P. Scheglov,A.V. Chikiryaka,B.O. Kushnarev

DOI: https://doi.org/10.48550/arXiv.2106.09583

2021-06-17

Abstract:Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $\alpha$-Cr$_2$O$_3$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $\alpha$-Ga$_2$O$_3$ and $\epsilon$-Ga$_2$O$_3$ phases with a dislocation density of about $2\cdot10^{10}$ cm$^{-2}$. The insertion of $\alpha$-Ga$_2$O$_3$ buffer layers resulted in phase-pure $\alpha$-Ga$_2$O$_3$ films and a fourfold reduction of the dislocation density to $5 \cdot 10^9$ cm$^{-2}$.

Applied Physics,Materials Science