Abstract:This work explores the applicability of atomic layer deposition (ALD) in producing highly oriented crystalline gallium oxide films on foreign substrates at low thermal budgets. The effects of substrate, deposition temperature, and annealing process on formation of crystalline gallium oxide are discussed. The Ga2O3 films exhibited a strong preferred orientation on the c-plane sapphire substrate. The onset of formation of crystalline gallium oxide is determined, at which only two sets of planes, i.e., α-Ga2O3 (006) and β-Ga2O3 (4̅02), are present parallel to the surface. More specifically, this work reports, for the first time, that epitaxial gallium oxide films on sapphire start to form at deposition temperatures ≥ 190 °C by using an optimized plasma-enhanced ALD process such that α-Ga2O3 (006)∥α-Al2O3 (006) and β-Ga2O3 (2̅01)∥α-Al2O3 (006). Both α-Ga2O3 (006) and β-Ga2O3 (2̅01) planes are polar planes (i.e., consisting of only one type of atom, either Ga or O) and, therefore, favorable to form by ALD at such low deposition temperatures. Ellipsometry and van der Pauw measurements confirmed that the crystalline films have optical and electrical properties close to bulk gallium oxide. The film grown at 277 °C was determined to have superior properties among as-deposited films. Using TEM to locate α-Ga2O3 and β-Ga2O3 domains in the as-deposited crystalline films, we proposed a short annealing scheme to limit the development of α-Ga2O3 domains in the film and produce pure β-Ga2O3 films via an energy-efficient process. A pure β-Ga2O3 phase on sapphire with β-Ga2O3 (2̅01)∥α-Al2O3 (006) was successfully achieved by using the proposed process at the low annealing temperature of 550 °C preceded by the low deposition temperature of 190 °C. The results of this work enable epitaxial growth of gallium oxide thin films, with superior material properties offered by ALD, not only with potential applications as a high-performance material in reducing global energy consumption but also with an energy-efficient fabrication process.

Mist CVD-based growth of crystalline alpha chromium oxide (α-Cr2O3) on c-plane sapphire substrate with chromium acetylacetonate as a precursor

Atomic layer deposition of chromium oxide—An interplay between deposition and etching

Cr2O3 thin films grown at room temperature by low pressure laser chemical vapour deposition

CHARACTERIZING CRYSTALLINE CHROMIUM OXIDE THIN FILM GROWTH PARAMETERS

A Novel Method for Growing α-Ga2O3 Films Using Mist-CVD Face-to-face Heating Plates

Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

Preparation of Self-Healing Α-Al2o3 Films by Low Temperature Thermal Oxidation

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Mechanical and Optical Properties of Cr2O3 Thin Films Grown by Atomic Layer Deposition Method Using Cr(thd)3 and Ozone

HVPE growth of corundum-structured $α$-Ga$_2$O$_3$ on sapphire substrates with $α$-Cr$_2$O$_3$ buffer layer

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

CVD of CrO2: towards a lower temperature deposition process

Crystallization Orientation Relationship of Dip-Coated Al Film on Sapphire

Preparation of Self-Healing Α-Al2o3 Film on Rapid Quenching Al-Cr Alloy by Thermal Oxidation at Low Temperature

Influence of HCl concentration in source solution and growth temperature on formation of α-Ga2O3 film via mist-CVD process

Heteroepitaxial Growth of Thickα-Ga2o3film on Sapphire (0001) by MIST-CVD Technique

Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition

Phase Tailoring and Wafer-Scale Uniform Hetero-Epitaxy of Metastable-Phased Corundum Α-Ga2o3 on Sapphire

Investigation of Growth, Structural and Optical Properties of CeO2 Nanocrystalline Thin Films Prepared by Pulsed Spray-Evaporation Chemical Vapor Deposition (PSE-CVD)