Abstract:The intrinsic ferroelectric switching characteristics of aluminum scandium nitride has been revealed and the profound effect of defects on the nucleation and domain propagation is systematically studied. The device integration of aluminum scandium nitride and 2D materials holds great potential for neuromorphic computing. Aluminum Scandium Nitride (Al1−xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation‐based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183 ps, is captured, and effectively simulated using a nucleation‐limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long‐term reliability of devices is also confirmed by time‐dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field‐effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN‐based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.

A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Van Der Waals Antiferroelectric Magnetic Tunnel Junction: A First-Principles Study of a CrSe2/CuInP2S6/CrSe2 Junction.

AlScN/n-GaN Ferroelectric Memristors With Controllable On/Off Ratios and Reversible Bipolar Resistive Switching Characteristics

Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers

Artificial Neural Network Models for Metal-Ferroelectric-insulator-semiconductor Ferroelectric Tunnel Junction Memristor

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor

Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel

Electrically Controlled All‐antiferromagnetic Tunnel Junctions on Silicon with Large Room‐temperature Magnetoresistance

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

High-Speed Switching and Giant Electroresistance in an Epitaxial Hf 0.5 Zr 0.5 O 2 -Based Ferroelectric Tunnel Junction Memristor

Ferroelectric memristor based on Li-doped BiFeO3 for information processing

Amorphous ZrO2 Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide