Abstract:The intrinsic ferroelectric switching characteristics of aluminum scandium nitride has been revealed and the profound effect of defects on the nucleation and domain propagation is systematically studied. The device integration of aluminum scandium nitride and 2D materials holds great potential for neuromorphic computing. Aluminum Scandium Nitride (Al1−xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation‐based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183 ps, is captured, and effectively simulated using a nucleation‐limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long‐term reliability of devices is also confirmed by time‐dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field‐effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN‐based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.

Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers

Al0.68Sc0.32N/SiC based metal-ferroelectric-semiconductor capacitors operating up to 900 C

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

Integration of Ferroelectric Al 0.8 Sc 0.2 N on Si (001) Substrate

Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Demonstration of 10 nm Ferroelectric Al0.7Sc0.3N-Based Capacitors for Enabling Selector-Free Memory Array

ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel

Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices

Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

ScAlN-Based ITO Channel Ferroelectric Field-Effect Transistors With Large Memory Window

Ultrathin AlScN for low-voltage driven ferroelectric-based devices

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\Circ$c

Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode

MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

AlScN: A III-V semiconductor based ferroelectric

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide