Direct observation of ferroelectricity in two-dimensional MoS2
Alexey Lipatov,Pradeep Chaudhary,Zhao Guan,Haidong Lu,Gang Li,Olivier Crégut,Kokou Dodzi Dorkenoo,Roger Proksch,Salia Cherifi-Hertel,Ding-Fu Shao,Evgeny Y. Tsymbal,Jorge Íñiguez,Alexander Sinitskii,Alexei Gruverman
DOI: https://doi.org/10.1038/s41699-022-00298-5
IF: 10.516
2022-03-15
npj 2D Materials and Applications
Abstract:Abstract Recent theoretical predictions of ferroelectricity in two-dimensional (2D) van der Waals materials reveal exciting possibilities for their use in scalable low-power electronic devices with polarization-dependent functionalities. These prospects have been further invigorated by the experimental evidence of the polarization response in some transition metal chalcogenides (TMCs)—a group of narrow-band semiconductors and semimetals with a wealth of application potential. Among the TMCs, molybdenum disulfide (MoS 2 ) is known as one of the most promising and robust 2D electronic materials. However, in spite of theoretical predictions, no ferroelectricity has been experimentally detected in MoS 2 , while the emergence of this property could enhance its potential for electronics applications. Here, we report the experimental observation of a stable room-temperature out-of-plane polarization ordering in 2D MoS 2 layers, where polarization switching is realized by mechanical pressure induced by a tip of a scanning probe microscope. Using this approach, we create the bi-domain polarization states, which exhibit different piezoelectric activity, second harmonic generation, surface potential, and conductivity. Ferroelectric MoS 2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P 3 m 1 space-group symmetry and corroborated by theoretical modeling. Experiments on the flipped flakes reveal that the 1T”-MoS 2 samples consist of the monolayers with randomly alternating polarization orientation, which form stable but switchable “antipolar” head-to-head or tail-to-tail dipole configurations. Mechanically written domains are remarkably stable facilitating the application of 1T”-MoS 2 in flexible memory and electromechanical devices.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology