Abstract:In this work, we show how domain-engineered lithium niobate can be used to selectively dope monolayer molybdenum selenide (MoSe2) and tungsten selenide (WSe2) and demonstrate that these ferroelectric domains can significantly enhance or inhibit photoluminescence (PL), with the most dramatic modulation occurring at the heterojunction interface between two domains. A micro-PL and Raman system is used to obtain spatially resolved images of the differently doped transition metal dichalcogenides (TMDs). The domain-inverted lithium niobate causes changes in the TMDs due to electrostatic doping as a result of the remnant polarization from the substrate. Moreover, the differently doped TMDs (n-type MoSe2 and p-type WSe2) exhibit opposite PL modulation. Distinct oppositely charged domains were obtained with a 9-fold PL enhancement for the same single MoSe2 sheet when adhered to the positive (P+) and negative (P-) domains. This sharp PL modulation on the ferroelectric domain results from different free electron or hole concentrations in the material's conduction band or valence band. Moreover, excitons dissociate rapidly at the interface between the P+ and P- domains due to the built-in electric field. We are able to adjust the charge on the P+ and P- domains using temperature via the pyroelectric effect and observe rapid PL quenching over a narrow temperature range, illustrating the observed PL modulation is electronic in nature. This observation creates an opportunity to harness the direct bandgap TMD 2D materials as an active optical component for the lithium niobate platform using domain engineering of the lithium niobate substrate to create optically active heterostructures that could be used for photodetectors or even electrically driven optical sources on-chip.

Electrical switching between exciton dissociation to exciton funneling in MoSe 2 /WS 2 heterostructure

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Ultrafast Energy Transfer of Both Bright and Dark Excitons in 2D van der Waals Heterostructures Beyond Dipolar Coupling

Kapitza-resistance-like exciton dynamics in atomically flat MoSe2-WSe2 lateral heterojunction

Control of Hybrid Exciton Lifetime in MoSe2/WS2 Moiré Heterostructures

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure

Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction

Ferroelectric driven exciton and trion modulation in monolayer MoSe2 and WSe2

Phonon-Mediated Interlayer Charge Separation and Recombination in a MoSe2/WSe2 Heterostructure

Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity

Photoluminescence Enhancement of MoS2/CdSe Quantum Rod Heterostructures Induced by Energy Transfer and Exciton-Exciton Annihilation Suppression.

Nonvolatile Electric Control of Exciton Complexes in Monolayer MoSe 2 with Two-Dimensional Ferroelectric CuInP 2 S 6

Efficient photoluminescence enhancement and tunable photocarrier transfer in vertical 2D organic–inorganic heterostructure by energy funneling

Exciton Radiative Recombination Dynamics and Nonradiative Energy Transfer in Two-Dimensional Transition-Metal Dichalcogenides

Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides

Exciton Dynamics in MoS 2 -Pentacene and WSe 2 -Pentacene Heterojunctions

Electrically Tunable Non-Radiative Lifetime in WS2/WSe2 Heterostructures

Spontaneous Exciton Dissociation in Transition Metal Dichalcogenide Monolayers

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a Heterostructure