Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure

Electrically Tunable Non-Radiative Lifetime in WS2/WSe2 Heterostructures

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS 2 through interface engineering

Tailoring Photoluminescence of WS2-microcavity Coupling Devices in Broad Visible Range

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

All-optical reversible manipulation of exciton and trion emissions in monolayer WS2

Electrical switching between exciton dissociation to exciton funneling in MoSe 2 /WS 2 heterostructure

Van der Waals epitaxy of CsPbBr 3 /WSe 2 heterostructure and dynamics study of exciton recombination

Tunable interlayer excitons and switchable interlayer trions via dynamic near-field cavity

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Control of Hybrid Exciton Lifetime in MoSe2/WS2 Moiré Heterostructures

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

Control of the Exciton Radiative Lifetime in Van Der Waals Heterostructures

Switching of K-Q Intervalley Trions Fine Structure and Their Dynamics in N-Doped Monolayer WS2

Electrically tunable layer-hybridized trions in doped WSe2 bilayers

Non-Equilibrium First-Order Exciton Mott Transition at Monolayer Lateral Heterojunctions Visualized by Ultrafast Microscopy

Electrically tunable layer-hybridized trions in doped WSe$_2$ bilayers