Thermoelectric performance of P-N-P abrupt heterostructures vertical to temperature gradient

Bohang Nan,Guiying Xu,Quanxin Yang,Tao Guo
DOI: https://doi.org/10.48550/arXiv.2009.11255
2020-09-24
Abstract:We present a model for P-N-P abrupt heterostructures vertical to temperature gradient to improve the thermoelectric performance. The P-N-P heterostructure is considered as an abrupt bipolar junction transistor due to an externally applied temperature gradient paralleled to depletion layers. Taking Bi2Te3 and Bi0.5Sb1.5Te3 as N-type and P-type thermoelectric materials respectively for example, we achieve the purpose of controlling the Seebeck coefficient and the electrical conductivity independently while amplifying operation power. The calculated results show that the Seebeck coefficient can reach 3312V/K, and the ZTmax values of this model are 45 or 425, which are tens or even hundreds of times greater than those of bulk materials and films.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to significantly improve the performance of thermoelectric materials by designing a new type of P - N - P abrupt heterostructures. Specifically, the authors hope to achieve independent control of the Seebeck coefficient and electrical conductivity and amplify the operating power by introducing P - N - P heterostructures perpendicular to the temperature gradient, thereby greatly increasing the thermoelectric figure of merit (ZT value). ### Background and Problem Description 1. **Limitations of Traditional Thermoelectric Materials** - The performance of thermoelectric materials is usually measured by the dimensionless figure of merit \(ZT\), which is defined as: \[ ZT=\frac{S^{2}\sigma T}{\kappa} \] where \(S\) is the Seebeck coefficient, \(\sigma\) is the electrical conductivity, \(T\) is the absolute temperature, and \(\kappa\) is the thermal conductivity. - The \(ZT\) values of traditional bulk thermoelectric materials (such as Bi₂Te₃, PbTe, and SiGe alloys) can usually only reach about 1, which is difficult to meet the needs of practical applications. 2. **Research Progress of Low - Dimensional Thermoelectric Materials** - Since the 1990s, low - dimensional thermoelectric materials (such as quantum wells, quantum dot superlattices, etc.) have become a research hotspot because they can significantly increase the power factor. - However, the improvements of these materials mainly come from the reduction of lattice thermal conductivity, rather than the increase of the power factor, and it is difficult to independently control the Seebeck coefficient and electrical conductivity. 3. **Potential of P - N Junctions in the Thermoelectric Field** - P - N junctions have been widely studied and applied since the 1950s. In recent years, some studies have shown that P - N junctions can enhance the Seebeck coefficient and \(ZT\) value in thermoelectric materials. - Wagner and Span proposed a new method, that is, directly connecting P - type and N - type materials without using metal electrodes and applying a temperature gradient. The experimental results show that this method is more effective than traditional P - N junctions. ### Solution To overcome the above problems, the authors proposed a P - N - P abrupt heterostructure model, which is perpendicular to the temperature gradient. Through this structure, the P - N - P heterostructure can work like a bipolar transistor, thereby achieving power amplification. Specifically: - **Independent Control of the Seebeck Coefficient and Electrical Conductivity**: By adjusting the Seebeck coefficient at the base - collector interface, independent control of the Seebeck coefficient and electrical conductivity is achieved. - **Significantly Increase the ZT Value**: The calculation results show that the Seebeck coefficient of this model can reach 3312 μV/K, and the maximum ZT value can reach 45 or 425, which is much higher than the \(ZT\) values of bulk materials and thin - film materials. ### Conclusion This research not only provides a novel method to significantly improve the performance of thermoelectric materials but also provides a new research perspective for other energy conversion mechanisms (such as photovoltaic conversion).