Abstract:Environmental heat-to-electric energy conversion provides a promising solution to power sensors used for wearable and portable devices. Yet the near-room-temperature thermoelectric materials are extremely rare. The natural heterostructure [Bi2]m[Bi2Q3]n family provides an important platform to search and develop the cheaper and less toxic of such materials. However, the bottleneck problem in this family is how to enhance the interlayer electrical conductivity (σ). Herein, we uncover for the first time that the delocalized π-bond interaction between the stacking layers in the [Bi2]m[Bi2Se3]n family effectively increases the interlayer carrier mobility (μH) and σ. Moreover, we propose an empirical index, F = Dpx,py(Bi0)/Dpx,py(Bi3+) along the kz direction in the Brillouin zone to evaluate the strength of the interlayer delocalized π-bond. F is optimized at a value of 1, under which μH is maximized. Interestingly, Bi8Se7 possessing an optimal F = 1.06 is predicted to have the best μH in the [Bi2]m[Bi2Q3]n family. Our subsequent experiments confirm the as-synthesized Bi8Se7 exhibiting n-type behavior with a μH value (33.08 cm2/(V s) at 300 K) that is higher than that of BiSe (26.19 cm2/(V s) at 300 K) and an enhanced σ value. Furthermore, the Te/Sb codoping, via varying the top of the valence band, significantly increases the Seebeck coefficient and eventually enhances the ZT value to ∼0.7 in Bi5.6Sb2.4Se5Te2 at 425 K along the hot-pressing direction, which is comparable to the optimized value of BiSe. According to the single parabolic band model prediction, the ZT of Bi5.6Sb2.4Se5Te2 may reach ∼1.2 at 425 K, suggesting a novel and promising n-type thermoelectric material near room temperature.

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High Thermoelectric Performance of PNP Abrupt Heterostructures by Independent Regulation of the Electrical Conductivity and Seebeck Coefficient

Enhanced Thermoelectric Performance in N-Type Bi2Te3-Based Alloys Via Suppressing Intrinsic Excitation.

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Anisotropic thermoelectric transport properties of Bi0.5Sb1.5Te2.96+x zone melted ingots

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Driving Perpendicular Heat Flow: Ambipolar Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling

Probing photocarrier dynamics in a Bi2Te3–Te eutectic p–n junction with a laser terahertz emission microscope

Synergistic Improvement of BiI3 and In on Thermoelectric Properties of Zone-Melted n-Type Bi2Te2.7Se0.3

Multi-scale hierarchical microstructure modulation towards high room temperature thermoelectric performance in <i>n</i>-type Bi<sub>2</sub>Te<sub>3</sub>-based alloys

Significantly Enhanced Thermoelectric Performance in n‐type Heterogeneous BiAgSeS Composites

Simultaneous Regulation of Electrical and Thermal Transport Properties of N-Type Bi2Te3 Via Adding Excessive Te Followed by Se Doping

High-Temperature Thermoelectric Monolayer Bi2TeSe2 with High Power Factor and Ultralow Thermal Conductivity

High Thermoelectric Performance of N-Type PbTe1−S Due to Deep Lying States Induced by Indium Doping and Spinodal Decomposition

Bi8Se7: Delocalized Interlayer π-Bond Interactions Enhancing Carrier Mobility and Thermoelectric Performance near Room Temperature

Broad-Temperature Thermoelectric Figure of Merit Enhancement in Unconventional n-Type Bi 2 Te 2.3 Se 0.7 Alloys

Enhancing the room temperature thermoelectric performance of n-type Bismuth-telluride-based polycrystalline materials by low-angle grain boundaries

Realizing thermoelectric cooling and power generation in N-type PbS0.6Se0.4 via lattice plainification and interstitial doping