Abstract:An ideal thermoelectric material would be a semiconductor with high electrical conductivity and relatively low thermal conductivity: an "electron crystal, phonon glass". Introducing nanoscale heterostructures into the bulk TE matrix is one way of achieving this intuitively anomalous electron/phonon transport behavior. The heterostructured interfaces are expected to play a significant role in phonon scattering to reduce thermal conductivity and in the energy-dependent scattering of electrical carriers to improve the Seebeck coefficient. A nanoparticle building block assembly approach is plausible to fabricate three-dimensional heterostructured materials on a bulk commercial scale. However, a key problem in applying this strategy is the possible negative impact on TE performance of organic residue from the nanoparticle capping ligands. Herein, we report a wet chemical, surfactant-free, low-temperature, and easily up-scalable strategy for the synthesis of nanoscale heterophase Bi(2)Te(3)-Te via a galvanic replacement reaction. The micro-nano heterostructured material is fabricated bottom-up, by mixing the heterophase with commercial Bi(2)Te(3). This unique structure shows an enhanced zT value of ∼0.4 at room temperature. This heterostructure has one of the highest figures of merit among bismuth telluride systems yet achieved by a wet chemical bottom-up assembly. In addition, it shows a 40% enhancement of the figure of merit over our lab-made material without nanoscale heterostructures. This enhancement is mainly due to the decrease in the thermal conductivity while maintaining the power factor. Overall, this cost-efficient and room-temperature synthesis methodology provides the potential for further improvement and large-scale thermoelectric applications.

Double–layered GeTe/Sb2Te heterostructures for enhancing thermoelectric performance

Microstructures and Thermoelectric Properties of GeSbTe Based Layered Compounds

Decoupling opposed thermoelectric properties

2D Bi2Te3/Si heterostructure with high thermoelectric power factor enabled by interface regulated carrier injection

Enhanced thermoelectric performance in GeTe-Sb2Te3 pseudo-binary via lattice symmetry regulation and microstructure stabilization

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Enhanced Thermoelectric Performance in Ge 0.955− x Sb x Te/FeGe 2 Composites Enabled by Hierarchical Defects

Anionic regulation and valence band convergence boosting the thermoelectric performance of Se-alloyed GeSb 2 Te 4 single crystal

Synergetic Enhancement of Thermoelectric Performance in a Bi0.5Sb1.5Te3/SrTiO3 Heterostructure

Silver-Based Intermetallic Heterostructures in Sb2Te3 Thick Films with Enhanced Thermoelectric Power Factors

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Improvement of the thermoelectric properties of GeTe- and SnTe-based semiconductors aided by the engineering based on phase diagram

Engineering of charge carriers via a two-dimensional heterostructure to enhance the thermoelectric figure of merit.

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Surfactant-free Synthesis of Bi2Te3-Te Micro-Nano Heterostructure with Enhanced Thermoelectric Figure of Merit.

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Structural modulation and resonant level enable high thermoelectric performance of GeTe in the mid-to-low temperature range

Tailoring band structure and Ge precipitates through Er and Sb/Bi co-doping to realize high thermoelectric performance in GeTe

Band structure and microstructure modulations enable high quality factor to elevate thermoelectric performance in Ge0.9Sb0.1Te-x%FeTe2

Multiphase Coherent Nanointerface Network Enhances Thermoelectric Performance for Efficient Energy Conversion and Contactless Thermosensation Applications in GeTe

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance