Band structure and microstructure modulations enable high quality factor to elevate thermoelectric performance in Ge0.9Sb0.1Te-x%FeTe2

Yang Jin,Tao Hong,Dongyang Wang,Yu Xiao,Wenke He,Xiang Gao,Yuting Qiu,Li-Dong Zhao

DOI: https://doi.org/10.1016/j.mtphys.2021.100444

IF: 11.021

2021-09-01

Materials Today Physics

Abstract:GeTe is an excellent mid-temperature thermoelectric material with various freedom degrees to tune the thermoelectric performance, which has drawn intensive attentions. Herein, superior thermoelectric performance of GeTe-based materials is achieved through significantly elevating quality factor B with FeTe2 introduction. First-principles calculations show that introducing FeTe2 into GeTe can increase the density of states due to the contribution of the 3d orbital of Fe, leading to an enhancement of effective mass from ∼2.21m 0 in Fe-free sample to ∼3.01 m 0 in Ge0.9Sb0.1Te–2%FeTe2, which could maintain high electrical transport properties. Meanwhile, the lattice thermal conductivity is drastically suppressed by Van der Waals gaps, Fe-rich nanoprecipitates and strain field fluctuations with minimal disruption on carrier transport, leading to a minimum lattice thermal conductivity of ∼0.54 Wm-1 K−1. Ultimately, a superior ZT ∼2.1 at 723 K and a ZT ave of ∼1.25 at 300–773 K are attained in Ge0.9Sb0.1Te–1%FeTe2.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

The problem this paper attempts to address is the optimization of the thermoelectric performance of Ge₀.₉Sb₀.₁Te material by introducing FeTe₂. Specifically, the study focuses on the following aspects: 1. **Band Structure and Microstructure Modulation**: By introducing FeTe₂, the quality factor (B) of the material is improved, thereby enhancing the thermoelectric performance. First-principles calculations indicate that the introduction of FeTe₂ can increase the density of states (DOS), with the effective mass increasing from approximately 2.21m₀ in Fe-free samples to about 3.01m₀ when 2% FeTe₂ is included. 2. **Phonon Scattering and Reduction of Lattice Thermal Conductivity**: The study finds that factors such as van der Waals gaps, Fe-rich nanoprecipitates, and strain field fluctuations significantly reduce the lattice thermal conductivity. In Ge₀.₉Sb₀.₁Te with 2% FeTe₂, the lowest lattice thermal conductivity reaches approximately 0.54 Wm⁻¹K⁻¹. 3. **Comprehensive Performance Enhancement**: Combining the above strategies, a maximum ZT value of approximately 2.1 at 723 K is achieved in Ge₀.₉Sb₀.₁Te with 1% FeTe₂, with an average ZT value of about 1.25 in the range of 300 to 773 K. This result outperforms the performance of other GeTe-based materials. In summary, this study aims to significantly enhance the thermoelectric performance of Ge₀.₉Sb₀.₁Te material through the synergistic regulation of band structure and microstructure.

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