Abstract:Proximity-induced magnetic effects on the surface Dirac spectra of topological insulators are investigated by scanning tunneling spectroscopic studies of bilayer structures consisting of undoped Bi2Se3 thin films on top of Cr-doped Bi2Se3 layers. For thickness of the top Bi2Se3 layer equal to or smaller than 3 quintuple layers, a spatially inhomogeneous surface spectral gap Δ opens up below a characteristic temperature T c 2 D , ?> which is much higher than the bulk Curie temperature T c 3 D ?> determined from the anomalous Hall resistance. The mean value and spatial homogeneity of the gap Δ generally increase with increasing c-axis magnetic field (H) and increasing Cr doping level (x), suggesting that the physical origin of this surface gap is associated with proximity-induced c-axis ferromagnetism. On the other hand, the temperature (T) dependence of Δ is non-monotonic, showing initial increase below T c 2 D , ?> which is followed by a ‘dip’ and then rises again, reaching maximum at T ≪ T c 3 D . ?> These phenomena may be attributed to proximity magnetism induced by two types of contributions with different temperature dependences: a three-dimensional contribution from the bulk magnetism that dominates at low T, and a two-dimensional contribution associated with the RKKY interactions mediated by surface Dirac fermions, which dominates at T c 3 D ?> ≪ T < T c 2 D . ?> In addition to the observed proximity magnetism, spatially localized sharp resonant spectra are found along the boundaries of gapped and gapless regions. These spectral resonances are long-lived at H = 0, with their occurrences being most prominent near T c 2 D ?> and becoming suppressed under strong c-axis magnetic fields. We attribute these phenomena to magnetic impurity-induced topological defects in the spin texture of surface Dirac fermions, with the magnetic impurities being isolated Cr impurities distributed near the interface of the bilayer system. The long-term stability of these topologically protected two-level states may find potential applications to quantum information technology.

Coupling-decoupling of conducting topological surface states in thick Bi$_2$Se$_3$ single crystals

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Stability Of The Bi2se3(111) Topological State: Electron-Phonon And Electron-Defect Scattering

Imaging current distribution in a topological insulator Bi2Se3 in the presence of competing surface and bulk contributions to conductivity

Coherent topological transport on the surface of Bi₂Se₃

Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Dirac cone shift of a passivated topological Bi2Se3 interface state

Observation of Dirac-like surface state bands on the top surface of BiSe

Interplay between topological insulators and superconductors

Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures

Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness

Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3

Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering

Emergence of a weak topological insulator from the Bi$_x$Se$_y$ family and the observation of weak anti-localization

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

Observation of A Large-Gap Topological-Insulator Class with A Single Dirac Cone on the Surface

Introducing antiferromagnetic ordering on the surface states of Bi2Se3 topological insulator by Europium doping

Search for superconducting proximity effect in a topological insulator and high temperature superconductor heterostructure Bi2Se3/Bi2Sr2CaCu2O8+

The Coexistence of Superconductivity and Topological Order in the Bi 2 Se 3 Thin Films

Magnetism-induced Massive Dirac Spectra and Topological Defects in the Surface State of Cr-doped Bi2Se3-bilayer Topological Insulators