Emission current enhancement of MIM cathodes by optimizing the tunneling insulator thickness

Toshiaki Kusunoki,Masakazu Sagawa,Mutsumi Suzuki,Akitoshi Ishizaka,Kazutaka Tsuji,T. Kusunoki,M. Sagawa,M. Suzuki,A. Ishizaka,K. Tsuji

DOI: https://doi.org/10.1109/ted.2002.1003743

IF: 3.1

2002-06-01

IEEE Transactions on Electron Devices

Abstract:The relationship between the thickness of the anodized Al2 O3 tunneling insulator and the transfer ratio was investigated for metal–insulator–metal (MIM) cathodes to optimize the thickness in terms of a high transfer ratio and emission current. Combining ellipsometry, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM), we determined accurate thickness of anodized Al film less than 20 nm-thick. With the knowledge of accurate thickness, we found that the transfer ratio increases as the insulator thickness increases from 5.2 nm to 10.6 nm, but saturates at 13.3 nm and decreases slightly at 20.1 nm. Optimizing the thickness of the insulator to 13.3 nm raised the transfer ratio of 0.1% for our previous work [1]to 0.7%. A high emission current of 14 mA/cm2 was thus obtained. The existence of an optimal thickness of anodized Al2 O3 insulator was also clarified from a theoretical simulation. This is the result of a tradeoff, as thickness increases, between the decreasing probability of cutoff at the surface workfunction barrier of Ir–Pt–Au top electrode and the increased scattering of hot electrons inside the Al2 O3 insulator and top electrode. The relationship is discussed on the basis of the absolute distribution of energy of the hot electrons, which we determined by simulating inelastic scattering driven by electron–optical phonon interaction in the Al2 O3 insulator.

engineering, electrical & electronic,physics, applied