Improving the sensitivity of LaMnO 3 NTC films by Al ion implantation

Xiaomin Li,Long Chen,Juan Hou,Pengjun Zhao,Bo Gao,Qin Zhao,Aimin Chang,Qin Shi,Wenwen Kong

DOI: https://doi.org/10.1016/j.vacuum.2022.111704

IF: 4

2022-12-03

Vacuum

Abstract:The Al ion implantation was employed to modify the NTC characteristics of LaMnO 3 thin films sputtered on Si/SiO 2 substrates under different annealing temperatures. The crystal structure, morphology and ion distribution of the as-sputtered LaMnO 3 thin films and as-annealed Al-implanted films were carefully evaluated. Results indicated that (LaMnAl x O 3 ) y (Al 2 O 3 ) 1-y composite phase existed over the annealing temperature range after Al 3+ implanting into the LaMnO 3 film of perovskite phase. The film was nucleated throughout and the size of the grain decreased with the increase in annealing temperature. The Al 3+ implantation promoted the reduction of oxygen vacancy concentration while leading to the reduction in the equilibrium oxygen vacancy. As a result, the Mn 3+ /Mn 4+ ratio declined and the number of carriers reduced, which helped to increase the carrier migration barrier and activation energy. The direct manifestation of the latter is the increase of the thermal constant B value from 3192 K to 2111 K based on the premise of resistivity is closed. The successful modification of a traditional perovskite-type NTC material will bring an innovative perspective to the design of advanced functional film materials and provide ideas for further exploration of the material in high B and low resistivity temperature sensor applications.

materials science, multidisciplinary,physics, applied