Abstract:Atmospheric Pressure Plasma Processing (APPP) using inductively coupled plasma has demonstrated that it can achieve comparable removal rate on the optical surface of fused silica under the atmosphere pressure and has the advantage of inducing no sub-surface damage for its non-contact and chemical etching mechanism. APPP technology is a cost effective way, compared with traditional mechanical polishing, magnetorheological finishing and ion beam figuring. Thus, due to these advantages, this technology is being tested to fabricate large aperture optics of fused silica to help shorten the polishing time in optics fabrication chain. Now our group proposes to use inductively coupled plasma processing technology to fabricate ground surface of fused silica directly after the grinding stage. In this paper, form control method and several processing parameters are investigated to evaluate the removal efficiency and the surface quality, including the robustness of removal function, velocity control mode and tool path strategy. However, because of the high heat flux of inductively coupled plasma, the removal depth with time can be non-linear and the ground surface evolvement will be affected. The heat polishing phenomenon is founded. The value of surface roughness is reduced greatly, which is very helpful to reduce the time of follow-up mechanical polishing. Finally, conformal and deterministic polishing experiments are analyzed and discussed. The form error is less 3%, before and after the APPP, when 10um depth of uniform removal is achieved on a 60x60mm ground fused silica. Also, a basin feature is fabricated to demonstrate the figuring capability and stability. Thus, APPP is a promising technology in processing the large aperture optics.

Highly efficient damage-free correction of thickness distribution of quartz crystal wafers by atmospheric pressure plasma etching

Finishing of AT-cut quartz crystal wafer with nanometric thickness uniformity by pulse-modulated atmospheric pressure plasma etching

Effect of Substrate Heating in Thickness Correction of Quartz Crystal Wafer by Plasma Chemical Vaporization Machining

Study of Form Control Algorithm in Atmospheric Pressure Plasma Processing

High-precision finishing method for narrow-groove channel-cut crystal x-ray monochromator using plasma chemical vaporization machining with wire electrode

Surface Quality Improvement of Atmospheric Pressure Plasma Polishing (appp) in Machining of Silicon Ultra-Smooth Surfaces

Damage-free highly efficient plasma-assisted polishing of a 20-mm square large mosaic single crystal diamond substrate

Atmospheric Pressure Plasma Processing of Fused Silica in Different Discharge Modes

Form Control In Atmospheric Pressure Plasma Processing Of Ground Fused Silica

Research on a Compensation Correction Algorithm for the Removal Function of Atmospheric-Pressure Plasma Processing

Research on Removal Characteristic of the Optical Quartz with Atmospheric Pressure Plasma Jet

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

Design of the Atmospheric Pressure Low Temperature Plasma Polishing System for the Machining of Ultra-Smooth Surfaces

Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique

High Efficiency Processing of Si Wafer Edge by Ultrasonic Vibration Assisted Polishing

An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Automatic Characterization Method for the Quasi-Planar Freeform Surface by Atmospheric Pressure Plasma Processing

A New Method for the Ultra-smooth Machining of the Silicon Based Materials

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Topography-Selective Removal of Atmospheric Pressure Plasma Polishing

Research on a Micro-Processing Technology for Fabricating Complex Structures in Single-Crystal Quartz