Abstract:Lateral spin valves are used to generate and characterize pure spin currents. Non-local voltage measured in such structures provides information about spin polarization and spin decay rates. For wide high-transparency F/N contacts it was shown that the Johnson-Silsbee non-local effect is substantially enriched by closed-loop electric currents driven by local spin injection in the electrically dangling part of the valve. For valves with low-transparency F/I/N tunnel contacts such circular currents are strongly suppressed, yet we show that the voltage modifications persist, may be significant, and must be accounted for in the data analysis.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in non - local spin valves (NLSV), when using wide ferromagnetic/insulator/normal - metal (F/I/N) tunnel contacts, how to understand and quantify the influence of the closed - loop current caused by local spin injection on non - local voltage measurements. Specifically, the author explored how these closed - loop currents affect non - local resistance measurements and modified the Johnson - Silsbee formula to adapt to the case of low - transparency tunnel contacts. ### Background and Problem Description of the Paper A non - local spin valve (NLSV) consists of a normal - metal wire (N) and two ferromagnetic contacts (F1 and F2). The ferromagnetic contact F1 on the left injects spin - polarized electrons into the normal metal, generating a spin current \( j_s \), and these spin currents diffuse to the left and right directions. However, in the electrically floating part (on the right), only spin current exists, and there is no charge current \( j \). This non - equilibrium electron state results in a non - zero voltage \( V \) measured between F2 and N. For narrow, high - transparency F/N contacts, the Johnson - Silsbee formula gives the classical relationship for the non - local voltage \( V \): \[ V=\frac{p\mu_s}{2e} \] where \( p \) is the spin polarization rate and \( \mu_s \) is the spin - accumulation potential. However, when the contact width \( l_F \) exceeds the scale at which the spin - accumulation changes significantly, closed - loop currents \( j\neq0 \) are formed. These currents form eddy currents near the F2/N interface, significantly suppressing the measured non - local voltage \( V \) and making it depend on the position of the voltage probe. ### Influence of Tunnel Contacts For low - transparency F/I/N tunnel contacts, these closed - loop currents will be affected by the high resistance of the tunnel barrier. Theoretically, these currents should be strongly suppressed, thus restoring the Johnson - Silsbee result. But the author shows through theoretical analysis that even in the case of tunnel contacts, closed - loop currents still exist and significantly suppress the measured non - local voltage \( V \). ### Main Conclusions The author derives a modified non - local voltage formula applicable to tunnel contacts of any width \( l_F \): \[ V(l_F)=\frac{\lambda_s^N}{l_F}(1 - e^{-l_F / \lambda_s^N})V_{JS} \] where \( V_{JS}=\frac{\Pi\mu_s}{2e} \) is the local Johnson - Silsbee voltage and \( \lambda_s^N \) is the spin - diffusion length in the normal metal. ### Summary The main contribution of this paper lies in revealing the significant influence of closed - loop currents on non - local voltage measurements under low - transparency tunnel contacts and providing a modified theoretical model to explain experimental data. This provides an important theoretical basis for understanding spin - transport phenomena and designing more accurate spintronic devices.

Closed-loop electric currents and non-local resistance measurements with wide F/I/N tunnel contacts

Distinguishing Between Tunneling and Injection Regimes of Ferromagnet/Organic Semiconductor/Ferromagnet Junctions

Spin Transfer Torques in the Nonlocal Lateral Spin Valve.

Spin-dependent Seebeck effect in non-local spin valve devices

Nonlinear magnetotransport in dual spin valves

Thermal spin injection and interface insensitivity in permalloy/aluminum metallic non-local spin valves

Effective Nonlocal Spin Injection Through Low-Resistance Oxide Junctions

Spin injection and spin accumulation in all-metal mesoscopic spin valves

Many-Body Effects on the Tunneling Magnetoresistance of Spin Valves

Demonstration Of Spin Valve Effects In Silicon Nanowires

Intrinsic Asymmetries in Spin-Valves: a Tight Binding Model Study

Spin diffusion length and polarization of ferromagnetic metals measured by spin-absorption technique in lateral spin valves

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Unambiguous Electrical Detection of Spin-Charge Conversion in Lateral Spin-Valves

Spin-momentum locking induced non-local voltage in topological insulator nanowire

Conversion of equilibrium spin current into charge current through a quantum-dot spin valve subject to circularly polarized field

Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System

Bias and Temperature Dependence of Hot Electron Transport in A Spin-Valve Structure

Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves

Electrical spin injection and detection in a semiconductor. Is it feasible?

Observation of magnetic state dependent thermoelectricity in superconducting spin valves