Abstract:The Silicon Photomultiplier (SiPM) is a promising photo-detector for a variety of applications. However, the high dark count rate (DCR) of the SiPM is still a contemporary problem. Decreasing the DCR would significantly broaden the range of possible applications. In this work we present a novel method for the spatially resolved characterization of crystal defects in SiPMs. The contribution of crystal defects to the DCR is evaluated by exploiting the effect of "hot carrier luminescence" (HCL), which is light that is emitted during the Geiger mode operation of avalanche photodiodes (SiPM micro-cells). Spatially confined regions with an enhanced light emission intensity (hotspots) are identified within the active areas of SiPM micro-cells. By correlating the detected light intensity and the DCR, a significant contribution of up to 56 % of the DCR can be attributed to less than 5 % of the micro-cells. The analysis of the temperature dependence of the emitted light identifies the Shockley-Read-Hall-Generation to be the dominant mechanism responsible for the occurrence of hotspots. The motivation of this work is to generate a deeper understanding of the origin of hotspots in order to suppress their contribution to the DCR of SiPMs.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the high dark count rate (DCR) in silicon photomultipliers (SiPMs). Specifically, the authors propose a new method to characterize the spatial distribution of crystal defects in SiPMs, which contribute significantly to DCR. By exploiting the "Hot Carrier Luminescence" (HCL) effect, that is, the light emitted during the Geiger - mode operation of avalanche photodiodes (the micro - cells of SiPMs), researchers are able to identify local regions (hot spots) with enhanced light - emission intensity within the active area. By correlating the detected light intensity with DCR, the study found that less than 5% of the micro - cells can be attributed to as much as 56% of DCR. In addition, by analyzing the temperature - dependent emitted light, the Shockley - Read - Hall generation mechanism was determined to be the main cause of the appearance of hot spots. The motivation for this work is to gain a deeper understanding of the origin of hot spots and thus suppress their contribution to the DCR of SiPMs. The methods used in the paper include: 1. **Experimental setup**: The SiPM was placed in a dark box, and a CCD camera with a low light level was used to detect the light emitted by the micro - cells during avalanche breakdown. 2. **Data analysis algorithm**: An algorithm was developed to determine the number of hot spots and the light - emission intensity of each hot spot and correlate these data with DCR. 3. **Temperature - dependence study**: By varying the temperature, the mechanism of hot - spot generation was studied, and the Shockley - Read - Hall generation mechanism was found to be the main mechanism. 4. **Comparison of different types of SiPM**: Two KETEK SiPM types (PM3350T STD and PM3350T MOD) were studied, and it was found that the hot - spot density and DCR per hot spot of PM3350T MOD were both lower, resulting in a significant reduction in the overall DCR. Through these studies, the authors hope to provide theoretical and technical support for reducing the DCR of SiPMs, thereby broadening their range of use in various applications.

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