Modeling of Hot-Carrier Degradation driven by silicon-hydrogen bond dissociation in SPADs

Mathieu Sicre,Xavier Federspiel,Bastien Mamdy,David Roy,Francis Calmon

2024-08-03

Abstract:A novel approach for modeling Dark Count Rate (DCR) drift in Single-Photon Avalanche Diodes (SPADs) is proposed based on Hot-Carrier Degradation (HCD) inducing silicon-hydrogen bond dissociation at the Si/SiO2 interface. The energy and the quantity of hot-carriers are modeled by the interplay of carrier energy distribution and current density. The carrier energy distribution, achieved by a Full-Band Monte-Carlo simulation considering the band structure and the scattering mechanisms, establishes a crucial link to the degradation of the top SPAD interface, primarily influenced by hot electrons due to their broader energy spread. The current density is determined by analyzing the generation rates of carriers under dark and photo conditions, along with the multiplication rate, through a combination of experimental data and modeling techniques. Subsequently,these hot carriers are correlated with the distribution of bond dissociation energy, which is modeled by the disorder-induced local variations among the Si-H bond energy at the Si/SiO2 interface. The impact-ionization probability between hot carriers and Si-H bonds is then calculated by differentiating their energies, thereby determining the degradation kinetics. This enables the capture of the rise in dark current density with stress duration by the increasing number of defects, which in turn affects the modeling of degradation rate. For the first time, a direct correlation between the dark current and DCR, along with their drift over stress time, has been established, relying on the carrier generation rate originating from these defects together with the position-dependent breakdown probability Pt.This physic-based model allows to predict DCR for unprecedented long-term stress measurement time up to 10e6s, covering a whole set of characterization and stress conditions for SPAD devices.

Materials Science,Optics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the dark count rate (DCR) drift (∆DCR) problem caused by hot - carrier degradation (HCD) in single - photon avalanche diodes (SPADs). Specifically, the authors propose a new modeling method to describe the DCR drift due to the breakage of Si - H bonds at the Si/SiO₂ interface. This method is based on the energy distribution and current density of hot carriers. By considering the energy - band structure and scattering mechanisms through full - band Monte - Carlo simulation, an energy - distribution model closely related to the degradation of the top interface of SPADs is established. In addition, the carrier generation rates and multiplication rates under dark and illumination conditions are analyzed, and the current density is determined by combining experimental data and modeling techniques. Subsequently, these hot carriers are associated with the dissociation - energy distribution of Si - H bonds, and the impact - ionization probabilities between hot carriers and Si - H bonds are calculated by distinguishing their energies, thereby determining the degradation kinetics. Finally, this model can capture the dark - current density that increases with increasing stress time and predict ∆DCR under unprecedented long - time stress measurements (up to 10⁶ seconds), covering a full set of characterization and stress conditions of SPAD devices.