High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Anamika Singh Pratiyush,Sriram Krishnamoorthy,Swanand Vishnu Solanke,Zhanbo Xia,Rangarajan Muralidharan,Siddharth Rajan,Digbijoy N. Nath

DOI: https://doi.org/10.1063/1.4984904

2017-02-15

Abstract:In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop highly responsive deep - ultraviolet (Deep - UV) blind solar light detectors. Specifically, the researchers aim to fabricate metal - semiconductor - metal (MSM) - structured deep - ultraviolet photodetectors using β - Ga₂O₃ materials grown by molecular beam epitaxy (MBE) and demonstrate their excellent performance in the solar blind region (230 - 290 nm).

### Main problems and goals

1. **Improve the responsivity of deep - ultraviolet photodetectors**:
- Prepare high - quality β - Ga₂O₃ thin films by optimizing the MBE growth process.
- Fabricate MSM - structured photodetectors with high responsivity.

2. **Reduce dark current**:
- Ensure that the detector has an extremely low dark current during operation to improve the signal - to - noise ratio and detection sensitivity.

3. **Achieve efficient visible - light suppression**:
- Ensure that the detector has a high suppression ability for visible light, thereby achieving true solar - blind characteristics.

4. **Avoid the persistent photoconductivity (PPC) effect**:
- Ensure that the detector has a rapid switch between illumination and darkness without the persistent photoconductivity effect.

### Experimental results and performance indicators

- **Peak responsivity**: At a wavelength of 236 - 240 nm and a bias voltage of 4 V, the peak responsivity exceeds 1.5 A/W.
- **Visible - light suppression ratio**: Greater than 10⁵.
- **Dark current**: At a bias voltage of 20 V, the dark current is less than 10 nA.
- **Photocurrent transient characteristics**: There is no persistent photoconductivity effect, and it has very fast rise and fall times.
- **Highest on - off ratio**: Greater than 10³, which is the highest among currently MBE - grown β - Ga₂O₃ - based detectors.

### Conclusion

This research demonstrates the excellent performance of MSM - structured deep - ultraviolet photodetectors based on MBE - grown β - Ga₂O₃ materials in terms of high responsivity, low dark current, and efficient visible - light suppression, proving the great potential of this material in next - generation high - power transistors and deep - ultraviolet detectors.