Mica-based β-Ga 2 O 3 photodetector: Enabling solar-blind deep-ultraviolet detection with flexibility and transparency

Lijuan Ye,Jianhao Yu,Yanqi Mao,Xinmiao Xuan,Di Pang,Yan Tang,Honglin Li,Hong Zhang,Wanjun Li
DOI: https://doi.org/10.1016/j.mtcomm.2024.109665
IF: 3.8
2024-06-26
Materials Today Communications
Abstract:Flexible, transparent solar-blind deep-ultraviolet photodetectors (SBPDs) based on Ga 2 O 3 are gaining momentum for a wide range of future military and civilian applications. However, the fabrication of flexible, transparent SBPDs based on β-Ga 2 O 3 faces challenges due to the inability of commonly used polymer substrates to withstand the high temperatures needed for growth. In this study, the challenge was addressed by producing highly transparent β-phase Ga 2 O 3 thin films on mica substrates using rf magnetron sputtering and annealing techniques. Subsequently, flexible and transparent SBPDs were developed utilizing a metal-semiconductor-metal (MSM) configuration, combining the β-Ga 2 O 3 thin films with an aluminum-doped zinc oxide (AZO) transparent conductive layer. The device with full transparency to visible light revealed a remarkable responsivity of 1.25 A/W and rapid photoresponse rates of 0.18/0.06 s under 254 nm illumination, placing their performance at the forefront among β-Ga 2 O 3 -based flexible SBPDs. Notably, even after undergoing numerous mechanical bending tests at varying diameters and cycling counts, the device maintained consistent stability across all performance parameters. This study highlights the potential of mica-based β-Ga 2 O 3 photodetectors for enabling flexible and transparent solar-blind deep-ultraviolet detection.
materials science, multidisciplinary
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