Abstract:The demonstrate that single crystal ZnO nanowires with high density and large length/diameter ratio are successfully grown on Si(100)substrates at a series of growth temperatures,via simple and catalyst-free thermal evaporation.The structural and photoluminescence properties of the resulting samples are characterized using X-ray diffraction(XRD),field-emission scanning electron microscope(FESEM),transmission electron microscope(TEM),and photoluminescence(PL),respectively.The XRD and TEM investigations indicate that the resulting ZnO nanowires are single crystalline grown along the c-axis direction in preference with the hexagonal wurtzite phase;SEM results show that the growth temperature has an effect on the morphology and the length/diameter ratio of the resulting ZnO nanowires.700℃ was believed to be the optimized growth temperature among the series of temperatures,and the ZnO nanowire of which possesses the largest length/diameter ratio estimated about 300(15μm/50nm).Moreover,the room temperature PL measurements for the as-prepared ZnO nanowires exhibit two emission bands including a sharp and strong UV emission and a broad and week blue emission.The VS mechanism based deposition method in our experiment can be applied to large-scale manufacture of high-purity single crystal ZnO nanowires.

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