Abstract:Graphene offers many useful properties that can revolutionize modern electronic devices. Specifically, it provides high charge carrier mobility in a mechanically robust, atomically thin form factor. Many of these properties are observed in graphene which is prepared from exfoliated graphite and processed with electron beam lithography. These processes are both time intensive and cost- prohibitive for the large-scale production necessary for use in consumer electronics. This work details the processing and characterization of commercially available graphene from chemical vapor deposition (CVD) on SiO2/Si and on hBN-layered SiO2/Si wafers using conventional photolithography on the 4′′ wafer standard. The findings indicate that the CVD graphene films are resilient after processing even for lengths up to 1 mm. Electrical characterization via resistance measurements and the Hall Effect at room temperature clearly indicates the influence of the substrate material on the graphene’s electrical properties. At these length scales, graphene on SiO2 resembles that of a lightly doped semiconductor in terms of its carrier density (7.8 × 1015 cm−2), yet its carrier mobility (2.6 cm2/Vs) resembles that of a metal. Graphene on hBN/SiO2 has a carrier density of 8.2 × 1012 cm−2 and carrier mobility of 2.68 × 103 cm2/Vs—comparable to existing high-mobility semiconducting materials. CVD graphene and conventional photolithography does provide a cost-effective means for producing large form-factor graphene devices for low to moderate mobility applications and eventually for large-scale monolithic graphene electronics.

Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

Effective transfer of micron-size graphene to microfibers for photonic applications

Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Large Scale Graphene/h-Bn Heterostructures Obtained by Direct CVD Growth of Graphene Using High-Yield Proximity-Catalytic Process

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Towards scalable nano-engineering of graphene

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Clean and Efficient Transfer of CVD-grown Graphene by Electrochemical Etching of Metal Substrate

Low-temperature quantum transport in CVD-grown single crystal graphene

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

Transfer-free, Lithography-Free, and Micrometer-Precision Patterning of CVD Graphene on SiO2 Toward All-Carbon Electronics

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication.

Scalable Fabrication of Graphene Devices Through Photolithography

Growth Kinetics and Defects of CVD Graphene on Cu

Modified RCA clean transfer of graphene and all-carbon electronic devices fabrication

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications