Abstract:Graphene wafers have emerged in response to the increasing demand of wafer-scale two-dimensional materials and high-performance on-chip devices in the field of integrated circuits, microelectromechanical systems, and sensors.Waferscale graphene films display great application potential, owing to their atomic layer thickness, excellent thermal and electrical conductivity, and compatibility with wafer-processing technology.Therefore, batch production of graphene wafers is exceedingly crucial.The chemical vapor deposition (CVD) method has attracted attention for the production of high-quality graphene wafers with high controllability, high compatibility, and low cost.Mature CVD manufacturing has been widely employed in the semiconductor industry to date, aiding in the industrialization of CVD graphene wafers and creating opportunities for graphene to enter the new era of nanoelectronics.The quality of graphene wafers has a significant impact on the subsequent device fabrication; hence, considerable efforts have been made to date to realize precise control over domain size, structural defects, and layer thickness during synthesis.In this study, we summarize the recent progress made in wafer-scale CVD graphene synthesis.Initially, we introduce the quality requirements of graphene wafers targeting various application scenarios, and propose the classification of graphene wafers.Single crystallinity is considered to be a key requirement for the graphene used in high-performance electronics and optoelectronics.We then review the recent CVD-derived graphene wafers with regard to substrate types (metal/nonmetal), highlighting the constrictions in graphene quality and corresponding synthetic solutions.Batch synthesis of graphene wafers is further discussed.The significant role of flow dynamics in the up-scaling process is emphasized, followed by relevant experimental instances based on computational fluid dynamics simulations.Finally, strategies for obtaining graphene wafers are overviewed, with the proposal of future perspectives.This study focuses on three areas: (1) Application requirements for the quality of graphene wafers, including target substrate types and as-grown graphene features (chemical stability and electrical and thermal properties), (2) CVD strategies of graphene wafers: As for the growth scenarios on metal substrates, controllable preparation of bilayer/multilayer graphene and the elimination of structural defects remain challenging.With respect to the synthesis over nonmetal wafers, concrete examples highlighting the epitaxial growth on a crystalline substrate and tailorable growth on a surface-reconstructed substrate are summarized.(3) Batch synthesis of graphene wafers: CVD routes for scalable production are explored.

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication.

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Direct Formation of Wafer-Scale Single-Layer Graphene Films on the Rough Surface Substrate by PECVD

Transfer-free, Lithography-Free, and Micrometer-Precision Patterning of CVD Graphene on SiO2 Toward All-Carbon Electronics

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Batch Synthesis of Transfer-Free Graphene with Wafer-Scale Uniformity

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Toward large-scale CVD graphene growth by enhancing reaction kinetics via an efficient interdiffusion mediator and mechanism study utilizing CFD simulations

Rapid and Scalable Transfer of Large‐area Graphene Wafers

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Wafer-scale synthesis and transfer of monolayer graphene

Fast Growth of Graphene on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition with Floating Metal Catalysts

Low Temperature Growth of Graphene on Semiconductor

Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Synthesis of Graphene Wafers: from Lab to Fab

A Fast Transfer-Free Synthesis Of High-Quality Monolayer Graphene On Insulating Substrates By A Simple Rapid Thermal Treatment

Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Vapour-phase Graphene Epitaxy at Low Temperatures