Abstract:Rapid synthesis of CVD graphene film of up to 900 cm2 for each batch of growth in a 1-inch furnace by a unique configuration assembly of Cu foil and a porous mediator.The large area of the high-quality graphene film exhibits a high crystallinity (ID/IG: 0.16) and high electrical conductivity (760 Ω/sq).The experimental study together with the multiphysical simulation indicates that the porous mediator enhances the gas diffusion and reaction kinetics and improves the crystallinity and growth rate of graphene.Improving the interdiffusion of reactive species results in homogeneous nucleation and equivalent kinetic growth.The yield rate for the synthesis of large-area and high-quality graphene, based on the chemical vapor deposition (CVD) method, is limited by the reactor size of a tubular furnace. Additionally, the reported methods to achieve a high-throughput process are still challenging. Currently, the rolled-up or vertically stacked configuration setup is applied to increase the loading growth. However, the reported methods limit the kinetic reaction of CVD growth and lead to the degradation of the uniformity and crystallinity of as-grown graphene.Here, we propose a novel method to produce a high-yield and uniform monolayer graphene film by helical stacking of Cu with highly porous carbon cloth as an efficient interdiffusion mediator. Additionally, computational fluid dynamics (CFD) is applied to simulate the dynamic distribution within the mediator.This method allows the rapid synthesis of graphene films of up to 900 cm2 for each batch of growth in a 1-inch furnace. Graphene with optimized conditions exhibits a high crystallinity (ID/IG: 0.16) and electrical conductivity (760 Ω/sq). The comprehensive study on recipe optimization together with the multiphysical simulation suggests that the proposed carbon cloth is an ideal spacing mediator for CVD graphene with a high Cu-loading density. This enhancement is attributed to the homogeneous interdiffusion of reactive gas/species in both the transverse and radial directions, resulting in homogeneous nucleation and equivalent kinetic growth. The capacity could reach 15.56 m2/hour in an 8-inch system. The CFD simulation indicates that the porous mediator can improve gas distribution and balance the pressure between the Cu foils to enhance high-yield graphene synthesis. This method provides an efficient strategy for the synthesis of high-throughput and large-area CVD graphene films, which is beneficial for cost-effective and versatile graphene-based applications.Download : Download high-res image (203KB)Download : Download full-size image

A Fast Transfer-Free Synthesis Of High-Quality Monolayer Graphene On Insulating Substrates By A Simple Rapid Thermal Treatment

Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

High-Quality Graphene Synthesis on Amorphous SiC Through A Rapid Thermal Treatment

Rapid and Scalable Transfer of Large‐area Graphene Wafers

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Growth Mechanism of Transfer-Free Graphene Synthesized from Different Carbon Sources and Verified by Ion Implantation

A Scalable Polymer-Free Method for Transferring Graphene Onto Arbitrary Surfaces

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Wafer-scale synthesis and transfer of monolayer graphene

Fast Growth of Graphene on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition with Floating Metal Catalysts

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Self‐Aided Batch Growth of 12‐Inch Transfer‐Free Graphene Under Free Molecular Flow

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

Transfer of graphene onto arbitrary substrates via sublimable carrier

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication.

Direct Synthesis of Layer‐Tunable and Transfer‐Free Graphene on Device‐Compatible Substrates Using Ion Implantation Toward Versatile Applications

Barrier-assisted Ion Beam Synthesis of Transfer-Free Graphene on an Arbitrary Substrate

Transfer-free synthesis of multilayer graphene on silicon nitride using reusable gallium catalyst

Toward large-scale CVD graphene growth by enhancing reaction kinetics via an efficient interdiffusion mediator and mechanism study utilizing CFD simulations

Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper