Abstract:To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiOx has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiOx remains attractive. Here we show a facile confinement CVD approach in which we simply “sandwich” two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Chemical Vapor Deposition of Nanocrystalline Graphene Directly on Arbitrary High-Temperature Insulating Substrates.

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Noncatalytic Chemical Vapor Deposition of Graphene on High-Temperature Substrates for Transparent Electrodes

Direct Synthesis of Graphene on Sio2 Substrates by Chemical Vapor Deposition

Metal-catalyst-free and Controllable Growth of High-Quality Monolayer and AB-stacked Bilayer Graphene on Silicon Dioxide

Thickness-controlled Direct Growth of Nanographene and Nanographite Film on Non-Catalytic Substrates

Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

Transfer-free, Lithography-Free, and Micrometer-Precision Patterning of CVD Graphene on SiO2 Toward All-Carbon Electronics

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Autonomously Controlled Homogenous Growth of Wafer‐Sized High‐Quality Graphene Via a Smart Janus Substrate

Chemical Vapour Deposition Growth of Large Single Crystals of Monolayer and Bilayer Graphene

Chemical Vapor Deposition of Graphene on Thin-Metal Films

Metal-Free Catalytic Preparation of Graphene Films on a Silicon Surface Using CO as a Carbon Source in Chemical Vapor Deposition

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Wafer-Scale Single-Crystal Monolayer Graphene Grown Directly on Insulating Substrates

Direct Growth of Large Area Uniform Double Layer Graphene Films on MgO(100) Substrates by Chemical Vapor Deposition