Abstract:Direct growth of graphene on dielectric substrates is a prerequisite to the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis methods on dielectric substrates always involve a metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. Herein, a semiconducting, germanium (Ge)-assisted, chemical vapor deposition approach is proposed to produce monolayer graphene directly on arbitrary dielectric substrates. By the prepatterning of a catalytic Ge layer, the graphene with desired pattern can be achieved conveniently and readily. Due to the catalysis of Ge, monolayer graphene is able to form on Ge-covered dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. Optimization of the process parameters leads to complete sublimation of the catalytic Ge layer during or immediately after formation of the monolayer graphene, enabling direct deposition of large-area and continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on a transparent dielectric substrate using the proposed approach has exhibited a wide range of applications, including in both defogger and thermochromic displays, as already successfully demonstrated here.

Noncatalytic Chemical Vapor Deposition of Graphene on High-Temperature Substrates for Transparent Electrodes

Chemical Vapor Deposition of Nanocrystalline Graphene Directly on Arbitrary High-Temperature Insulating Substrates.

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Direct Growth of Graphene on Vertically Standing Glass by a Metal-Free Chemical Vapor Deposition Method

Direct Growth of Nanocrystalline Graphene/graphite All Carbon Transparent Electrode for Graphene Glass and Photodetectors

Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Catalyst-Free Growth of Nanographene Films on Various Substrates

Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

Direct Synthesis of Graphene on Sio2 Substrates by Chemical Vapor Deposition

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes

Direct Low-Temperature Synthesis of Graphene on Various Glasses by Plasma-Enhanced Chemical Vapor Deposition for Versatile, Cost-Effective Electrodes

Direct Chemical Vapor Deposition-Derived Graphene Glasses Targeting Wide Ranged Applications

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Controllable Direct Growth and Patterning of Graphene Based Transparent and Conductive Films on Insulating Substrates Via Cu Nanoparticles Assisted-Catalysis Method

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Near-equilibrium Chemical Vapor Deposition of High-Quality Single-Crystal Graphene Directly on Various Dielectric Substrates.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Graphene Transparent Electrodes Grown by Rapid Chemical Vapor Deposition with Ultrathin Indium Tin Oxide Contact Layers for Gan Light Emitting Diodes

Thickness-controlled Direct Growth of Nanographene and Nanographite Film on Non-Catalytic Substrates