Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Metal-catalyst-free and Controllable Growth of High-Quality Monolayer and AB-stacked Bilayer Graphene on Silicon Dioxide

Metal‐Free Growth of Nanographene on Silicon Oxides for Transparent Conducting Applications

Metal-Free Catalytic Preparation of Graphene Films on a Silicon Surface Using CO as a Carbon Source in Chemical Vapor Deposition

Wafer-Scale Graphene Growth on Si/SiO 2 Substrates via Metal-Free Chemical Vapor Deposition

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

CMOS-compatible catalytic growth of graphene on a silicon dioxide substrate

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

A facile approach to direct growth of layer-tunable graphene on Ge substrate

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

In situ atomic-scale observation of monolayer graphene growth from SiC

Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates