Abstract:Abstract Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials.

Large Scale Graphene/h-Bn Heterostructures Obtained by Direct CVD Growth of Graphene Using High-Yield Proximity-Catalytic Process

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Growth of h-BN/graphene heterostructure using proximity catalysis

Scalable High-Mobility Graphene/hBN Heterostructures

Rapid and catalyst-free CVD growth of graphene on hBN

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

In-Situ Growth of Graphene on Hexagonal Boron Nitride for Electronic Transport Applications

Graphene growth on h-BN by molecular beam epitaxy

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains