Abstract:The growth via chemical vapor deposition of decoupled graphene on crystalline Cu(111) films deposited on sapphire is introduced. The resulting graphene is lying atop a thin Cu2O layer and is charge neutral, low strained, and easy to transfer. Electrical transport measurements reveal excellent room temperature carrier mobilities, exceeding 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride, thus opening realistic pathways for high‐performance next‐generation applications. The growth of high‐quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non‐reducing low‐pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post‐growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry‐pick up — a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro‐mechanically exfoliated graphene flakes, and thus paves the way toward large‐scale production of pristine graphene suitable for high‐performance next‐generation applications.

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Growth of h-BN/graphene heterostructure using proximity catalysis

Rapid and catalyst-free CVD growth of graphene on hBN

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Increasing coverage of mono-layer graphene grown on hexagonal boron nitride

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene

Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Graphene growth on h-BN by molecular beam epitaxy

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition.

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.