Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by proximity catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This proximity catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Growth of h-BN/graphene heterostructure using proximity catalysis

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Large Scale Graphene/h-Bn Heterostructures Obtained by Direct CVD Growth of Graphene Using High-Yield Proximity-Catalytic Process

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Nickelocene-Precursor-Facilitated Fast Growth of Graphene/H-Bn Vertical Heterostructures and Its Applications in Oleds

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Rapid and catalyst-free CVD growth of graphene on hBN

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Controlled CVD growth of lateral and vertical graphene/h-BN heterostructures

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Epitaxially Grown Porous Heterostructure of Hexagonal Boron Nitride/Graphene As Efficient Electrocatalyst for H2o2 Generation

A Hydrogen-Initiated Chemical Epitaxial Growth Strategy for In-Plane Heterostructured Photocatalyst

Catalytic kinetic growth of half-metallic hexagonal boron nitride-graphene lateral heterostructure by transition metal single-atom catalyst on Rh(111)

Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

Precisely Aligned Graphene Grown on Hexagonal Boron Nitride by Catalyst Free Chemical Vapor Deposition.

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains