Abstract:We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the quality and stability of black phosphorus (BP) nano - devices, especially their performance in terms of quantum transport characteristics. Specifically, the authors solve these problems through the following methods: 1. **Encapsulation technology**: In order to reduce the influence of interface impurities and protect the BP material from oxidation, the authors use hexagonal boron nitride (h - BN) flakes to encapsulate BP. This method can significantly improve the stability and carrier mobility of BP nano - devices. 2. **Selection and preparation of metal electrodes**: Select appropriate metal electrodes (such as chromium (Cr) and titanium (Ti)) to control the type of BP channel (p - type or n - type), thereby achieving control of the device polarity. Metal electrodes with different work functions can effectively regulate the transition from p - type unipolar to bipolar, and then obtain high - quality ohmic contacts. 3. **Achievement of high mobility**: Through the above - mentioned encapsulation technology and selection of metal electrodes, the authors have achieved the highest - ever - recorded electron and hole mobilities, reaching 6000 cm²V⁻¹s⁻¹ and 8400 cm²V⁻¹s⁻¹ respectively. These high mobilities enable the observation of quantum oscillation phenomena in the laboratory magnetic field and further study of their quantum transport behavior. 4. **Study of quantum oscillations**: Using high - mobility BP devices, Shubnikov - de Haas (SdH) oscillations were observed at low temperatures, and the Lifshitz - Kosevich (LK) formula was applied to explain these quantum transport behaviors. This helps to determine important parameters such as Berry phase and cyclotron mass. In summary, this paper mainly solves how to improve the quality and performance of BP nano - devices by optimizing encapsulation technology and electrode material selection, especially their application potential in quantum transport.

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