Abstract:We studied the photoluminescence spectra of silicon and phosphorus co-implanted silica thin films on (100) silicon substrates as a function of isothermal annealing time. The rapid phase segregation, formation, and growth dynamics of intrinsic silicon nanocrystals are observed, in the first 600 s of rapid thermal processing, using dark field mode X-TEM. For short annealing times, when the nanocrystal size distribution exhibits a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts further to the red than the intrinsic nanocrystals. These results indicate the existence of competing pathways for the donor electron, which depends strongly on the nanocrystal size. In samples containing a large density of relatively small nanocrystals, the tendency of phosphorus to accumulate at the nanocrystal-oxide interface means that ionization results in a passivation of dangling bond (Pb-centre) type defects, through a charge compensation mechanism. As the size distribution evolves with isothermal annealing, the density of large nanocrystals increases at the expense of smaller nanocrystals, through an Ostwald ripening mechanism, and the majority of phosphorus atoms occupy substitutional lattice sites within the nanocrystals. As a consequence of the smaller band-gap, ionization of phosphorus donors at these sites increases the free carrier concentration and opens up an efficient, non-radiative de-excitation route for photo-generated electrons via Auger recombination. This effect is exacerbated by an enhanced diffusion in phosphorus doped glasses, which accelerates silicon nanocrystal growth.

Avalanche effects in solid-phase epitaxial crystallization induced by light-ion irradiation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Ion Irradiation Induced Bubble Relaxation in SiC

Structural and Luminescent Properties of Electron-Irradiated Silicon

Ion Assisted Nucleation in Amorphous Silicon: Mechanism and Theoretical Description

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

In situ crystallization of amorphous Sb2Se3 films at electron beam irradiation

The mechanism of ion induced amorphization in Si

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Anisotropy Effect of Crater Formation on Single Crystal Silicon Surface under Intense Pulsed Ion Beam Irradiation

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Direct simulation of ion beam induced stressing and amorphization of silicon

Formation of nanocrystals in a-Si thin films induced by pulsed laser ultraviolet irradiation

Molecular dynamics simulation of surface phenomena due to high electronic excitation ion irradiation in amorphous silica

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers