Abstract:Solid-phase epitaxial crystallization of amorphous Si layers on a crystalline Si substrate during B-ion irradiation is investigated over the temperature range 293 - 573 K. Regrowth occurs at all measured temperatures, with activation energy 0.07 eV and prefactor 2.36 nm / 10^14 B cm-2 The low activation energy suggests that free interstitial point defects are involved and the unusually large prefactor indicates that each interstitial crystallizes about 50 host Si atoms. We propose that interstitial annihilation at the a/c interface sets off a shock-like process that drives c-Si island nucleation and growth until terminated by misfit strain.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **To understand the mechanism of point defects (especially self - interstitial atoms) and their influence on the recrystallization rate and activation energy in the solid - phase epitaxial recrystallization (SPER) process induced by light - ion (such as boron - ion) irradiation under low - temperature conditions**. Specifically, the authors focus on: 1. **Low - activation - energy phenomenon**: Under the traditional thermodynamic equilibrium conditions, SPER in Si usually has an activation energy of about 2.7 eV. However, under ion - irradiation conditions, especially at lower temperatures, the activation energy is significantly reduced to about 0.07 eV. What are the reasons behind this low - activation - energy phenomenon? 2. **High crystallization efficiency**: It was found in the experiment that each implanted B ion can promote about 118 originally amorphous Si atoms to recrystallize into crystalline Si, and this efficiency is much higher than expected. What is the mechanism of this high efficiency? 3. **Microscopic processes**: Currently, the understanding of the microscopic mechanisms involved in the SPER process is limited, especially the behavior of point defects under non - equilibrium conditions. The authors hope to reveal these microscopic processes through research, especially the roles of self - interstitial atoms and boron - self - interstitial complexes (BI) in the recrystallization process. ### Main findings - **Low activation energy**: Through experimental measurement, the authors found that the activation energy of SPER is only 0.07 eV, which is much lower than the traditional value of 2.7 eV. This indicates that under ion - irradiation conditions, the recrystallization process may involve different mechanisms. - **Role of self - interstitial atoms**: The experimental results show that self - interstitial atoms play a key role in the recrystallization process. The annihilation of each self - interstitial atom can release a large amount of energy at the interface and trigger an "avalanche - like" process, thus driving the nucleation and growth of c - Si islands. - **Volume compensation mechanism**: The authors proposed a hypothesis that the capture of self - interstitial atoms can compensate for the tension generated by the intrusion of the c - Si phase into the lower - density a - Si phase. This mechanism can explain why one self - interstitial atom can promote a large number of a - Si atoms to recrystallize. ### Conclusion Through experimental and theoretical analysis, the paper reveals the key role of self - interstitial atoms in low - activation - energy and high - efficiency recrystallization in the SPER process induced by light - ion irradiation. These findings are helpful for better understanding the dynamic behavior of the amorphous/crystal interface at the nanoscale and provide new insights for future nano - electronic device processing.

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