Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

Evaluation of Radiation Hardness of High-Voltage Silicon Vertical JFETs

Normally-off trench JFET technology in 4H silicon carbide

A High Performance 4H-Sic Normally-off VJFET

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Bidirectional Current 4h‐sic VJFET

Towards Fully Integrated SiC Cascade Power Switches for High Voltage Applications

Investigation of HV/HR-CMOS Technology for the ATLAS Phase-II Strip Tracker Upgrade

1000-V 9.1- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Radiation Hardness of Two CMOS Prototypes for the ATLAS HL-LHC Upgrade Project.

430-V 12.4- $hboxmomegacdot Hboxcm^2$ Normally off 4H-Sic Lateral JFET

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

A Novel Normally-off GaN Vertical Schottky Source Tunnel-Junction Field-Effect Transistor

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC