Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

Evaluation of Radiation Hardness of High-Voltage Silicon Vertical JFETs

Rad-hard vertical JFET switch for the HV-MUX system of the ATLAS upgrade Inner Tracker

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

Normally-off trench JFET technology in 4H silicon carbide

Bidirectional Current 4h‐sic VJFET

Measurements on HV-CMOS Active Sensors After Irradiation to HL-LHC fluences

Neutron and proton tests of different technologies for the upgrade of the cold readout electronics of the ATLAS Hadronic End-cap Calorimeter

Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation

A High Performance 4H-Sic Normally-off VJFET

Curing early breakdown in silicon strip sensors with radiation

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Radiation Hardness of Two CMOS Prototypes for the ATLAS HL-LHC Upgrade Project.

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Design and Application of High-Voltage SiC JFET and Its Power Modules

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

4H-Sic Super-Junction JFET: Design and Experimental Demonstration