What problem does this paper attempt to address?

The problem that this paper attempts to solve is the origin of the negative magnetoresistance phenomenon and its influence on the surface state after introducing defects in the topological insulator BiSbTeSe₂. Specifically, the researchers introduced defects in the BiSbTeSe₂ material by Ar⁺ ion - beam bombardment, and then observed how these defects affected the magnetoresistance characteristics of the material and explored whether this influence changed the surface state of the material. ### Research Background - **Topological Insulator**: A topological insulator is a special material that is insulating inside but has conductive properties on the surface. The surface state of this material is protected by time - reversal symmetry and no backscattering occurs. - **Negative Magnetoresistance**: Generally, magnetoresistance refers to the change in resistance of a material under the action of a magnetic field. Negative magnetoresistance means that as the magnetic field increases, the resistance of the material decreases instead. - **Defect Introduction**: Introducing defects by ion - beam bombardment can change the electronic structure of the material, thereby affecting its electrical transport properties. ### Research Questions 1. **Origin of Negative Magnetoresistance**: The researchers found that in the case where the temperature is lower than 50 K and the magnetic field is greater than 2 T, the negative magnetoresistance phenomenon appears in BiSbTeSe₂. They attempted to determine the physical mechanism of this negative magnetoresistance. 2. **Stability of Surface State**: The researchers also focused on whether the surface state of the topological insulator was affected after introducing defects. In particular, they hoped to verify whether these surface states still remained immune to defects. ### Experimental Methods - **Sample Preparation**: High - quality BiSbTeSe₂ single crystals were grown using the improved Bridgman technique. - **Ion - beam Bombardment**: Defects were introduced by bombarding the sample surface with Ar⁺ ion - beam. - **Electrical Transport Measurement**: Resistance and magnetoresistance measurements were carried out using the Quantum Design PPMS system. - **Spectroscopic Analysis**: The change in the density of defect states was analyzed by inelastic electron tunneling spectroscopy (IETS) measurement. ### Main Findings - **Appearance of Negative Magnetoresistance**: In the case where the temperature is lower than 50 K and the magnetic field is greater than 2 T, an obvious negative magnetoresistance phenomenon appears in BiSbTeSe₂. - **Increase in Defect State Density**: The results of IETS measurement showed that after ion - beam bombardment, the density of defect states increased significantly. - **Stability of Surface State**: Although a large number of defects were introduced, the surface state of the topological insulator remained stable and was not significantly affected. ### Conclusion The research results show that the negative magnetoresistance phenomenon mainly originates from the increase in the density of defect states after ion - beam bombardment. These defect states participate in electrical transport through the electron - hopping process at low temperatures, resulting in the appearance of negative magnetoresistance. At the same time, the surface state of the topological insulator has strong immunity to defects and maintains its unique physical properties. This finding is helpful for in - depth understanding of the defect effects in topological insulators and their influence on electrical transport properties.

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